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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2008, Volume 87, Issue 10, Pages 635–637
(Mi jetpl116)
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This article is cited in 7 scientific papers (total in 7 papers)
CONDENSED MATTER
Spin-dependent tunneling conductance in TbCoFe/Pr6O11/TbCoFe films
N. N. Krupa Institute of Magnetism, National Academy of Sciences of Ukraine, ul. Vernadskogo 36b, Kiev, 03142, Ukraine
Abstract:
The experimental results of the investigation of tunneling magnetoresistance (TMR) in TbCoFe/Pr6O11/TbCoFe films at temperatures of 80 and 300 K are presented. The resistance of the structure increases by more than a factor of 1.5 at room temperature and by more than a factor of 3 at a temperature of 80 K under the transition from the state with the magnetization of the TbCoFe layers in a certain direction to the state with the magnetization in the opposite directions. The magnitude of TMR increases when the tunneling transition region is irradiated by nitrogen-laser radiation and when the thickness of the barrier layer increases from 10 to 40 nm. A large TMR value is presumably achieved due to the use of the paramagnetic Pr6O11 barrier layer.
Received: 14.02.2008 Revised: 07.04.2008
Citation:
N. N. Krupa, “Spin-dependent tunneling conductance in TbCoFe/Pr6O11/TbCoFe films”, Pis'ma v Zh. Èksper. Teoret. Fiz., 87:10 (2008), 635–637; JETP Letters, 87:10 (2008), 548–550
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https://www.mathnet.ru/eng/jetpl116 https://www.mathnet.ru/eng/jetpl/v87/i10/p635
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Abstract page: | 173 | Full-text PDF : | 84 | References: | 29 |
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