A. I. Orlov, L. G. Khvostantsev, “Effect of high pressure on the thermopower in gallium”, Pis'ma v Zh. Èksper. Teoret. Fiz., 87:10 (2008), 632–634; JETP Letters, 87:10 (2008), 545

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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2008, Volume 87, Issue 10, Pages 632–634 (Mi jetpl115)

This article is cited in 2 scientific papers (total in 2 papers)

CONDENSED MATTER

Effect of high pressure on the thermopower in gallium

A. I. Orlov, L. G. Khvostantsev

Vereshchagin Institute for High Pressure Physics, Russian Academy of Sciences, Troitsk, Moscow region, 142190, Russia

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Abstract: The absolute thermopower and relative electrical resistance of gallium have been measured at room temperature and at a pressure increased up to 7 GPa. As the initial phase, all of the Ga phases retain the positive value of the thermopower. At 4 GPa, a phase transition has been revealed.

Received: 04.04.2008

English version:
Journal of Experimental and Theoretical Physics Letters, 2008, Volume 87, Issue 10, Pages 545–547
DOI: https://doi.org/10.1134/S0021364008100068

Bibliographic databases:

Document Type: Article

PACS: 62.50.+p, 64.70.Kb, 72.15.Jf

Language: Russian

Citation: A. I. Orlov, L. G. Khvostantsev, “Effect of high pressure on the thermopower in gallium”, Pis'ma v Zh. Èksper. Teoret. Fiz., 87:10 (2008), 632–634; JETP Letters, 87:10 (2008), 545–547

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