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Izvestiya of Saratov University. Physics, 2013, Volume 13, Issue 1, Pages 7–9 (Mi isuph152)  
Physics

Voltage-capacitance characteristics of MFS-structures based on ferroelectric films

M. S. Afanasiev, A. Yu. Mityagin, G. V. Chucheva

Kotelnikov Institute of Radioengineering and Electronics, Fryazino Branch, Russian Academy of Sciences
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Abstract: Metal–ferroelectric–semiconductor (MFS) heterostructures are created on n-type and p-type silicon substrates. Electronically-controlled capacitors are realized in MFS heterostructures. Measured parameters of electronically-controlled capacitors at 50 V bias voltage showed, that the stroke of voltage-capacitance characteristics of capacitors on the p-type silicon mirror reflexion of the stroke of voltage-capacitance characteristics of capacitors on the n-type silicon.
Keywords: segnetoelectrics, metal–ferroelectric–semiconductor (MFS) structures, silicon, voltage-capacitance characteristics.
Funding agency Grant number
Russian Foundation for Basic Research 12-07-00662-à
Ministry of Science and Higher Education of the Russian Federation 16.513.11.3072
Document Type: Article
UDC: 537.9
Language: Russian
Citation: M. S. Afanasiev, A. Yu. Mityagin, G. V. Chucheva, “Voltage-capacitance characteristics of MFS-structures based on ferroelectric films”, Izv. Sarat. Univ. Physics, 13:1 (2013), 7–9
Citation in format AMSBIB
\Bibitem{AfaMitChu13}
\by M.~S.~Afanasiev, A.~Yu.~Mityagin, G.~V.~Chucheva
\paper Voltage-capacitance characteristics of MFS-structures based on ferroelectric films
\jour Izv. Sarat. Univ. Physics
\yr 2013
\vol 13
\issue 1
\pages 7--9
\mathnet{http://mi.mathnet.ru/isuph152}
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