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Izvestiya of Saratov University. Physics, 2013, Volume 13, Issue 1, Pages 9–12 (Mi isuph153)  
Physics

Calculation of thermal parameters and technology of formation MPL microwave range

M. S. Afanasieva, S. A. Levashova, A. Yu. Mityagina, G. V. Chuchevaa, A. E. Nabiyevb

a Kotelnikov Institute of Radioengineering and Electronics, Fryazino Branch, Russian Academy of Sciences
b N. Tusi Azerbaijan State Pedagogical University
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Abstract: The calculation of thermal parameters of super-high frequency microstrip microwave is performed. Calculations showed, that the high thermal conductivity of a diamond enables effective removal of heat from the active zone of microstrip microwave, increasing the output power up to 50 W at 3 GHz frequency without compromising the frequency characteristics of microstrip microwave.
Keywords: microstrip line, super-high frequences, thin films, diamonde substrate.
Funding agency Grant number
Ministry of Science and Higher Education of the Russian Federation 16.513.11.3072
Russian Foundation for Basic Research 12-07-00662-а
Document Type: Article
UDC: 537.9
Language: Russian
Citation: M. S. Afanasiev, S. A. Levashov, A. Yu. Mityagin, G. V. Chucheva, A. E. Nabiyev, “Calculation of thermal parameters and technology of formation MPL microwave range”, Izv. Sarat. Univ. Physics, 13:1 (2013), 9–12
Citation in format AMSBIB
\Bibitem{AfaLevMit13}
\by M.~S.~Afanasiev, S.~A.~Levashov, A.~Yu.~Mityagin, G.~V.~Chucheva, A.~E.~Nabiyev
\paper Calculation of thermal parameters and technology of formation MPL microwave range
\jour Izv. Sarat. Univ. Physics
\yr 2013
\vol 13
\issue 1
\pages 9--12
\mathnet{http://mi.mathnet.ru/isuph153}
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