Abstract:
The effect of substrate temperature Tsub and bias voltage Ubias on the texture of NiFe films with thickness d∼ 30–340 nm deposited by DC magnetron sputtering onto Si(111)/SiO2 substrates under working gas pressure ∼0.2 Pa has been investigated. It has been demonstrated that films grown at room substrate temperature have the (111) texture that is refined under a negative bias voltage. The deposition of films onto a grounded (Ubias∼ 0) substrate heated to Tsub∼ 440–640 K results in the formation of textured NiFe(200) films.
Citation:
A. S. Dzhumaliev, Yu. V. Nikulin, Yu. A. Filimonov, “Deposition of NiFe(200) and NiFe(111) textured films onto Si/SiO2 substrates by DC magnetron sputtering”, Fizika Tverdogo Tela, 58:5 (2016), 1019–1023; Phys. Solid State, 58:5 (2016), 1053–1057