Abstract:
The effect of substrate temperature $T_{\operatorname{sub}}$ and bias voltage $U_{\operatorname{bias}}$ on the texture of NiFe films with thickness $d\sim$ 30–340 nm deposited by DC magnetron sputtering onto Si(111)/SiO$_2$ substrates under working gas pressure $\sim$0.2 Pa has been investigated. It has been demonstrated that films grown at room substrate temperature have the (111) texture that is refined under a negative bias voltage. The deposition of films onto a grounded ($U_{\operatorname{bias}}\sim$ 0) substrate heated to $T_{\operatorname{sub}}\sim$ 440–640 K results in the formation of textured NiFe(200) films.
Citation:
A. S. Dzhumaliev, Yu. V. Nikulin, Yu. A. Filimonov, “Deposition of NiFe(200) and NiFe(111) textured films onto Si/SiO$_{2}$ substrates by DC magnetron sputtering”, Fizika Tverdogo Tela, 58:5 (2016), 1019–1023; Phys. Solid State, 58:5 (2016), 1053–1057