Fizika Tverdogo Tela
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



Fizika Tverdogo Tela:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Fizika Tverdogo Tela, 2016, Volume 58, Issue 5, Pages 1011–1018 (Mi ftt9994)  

This article is cited in 17 scientific papers (total in 17 papers)

Surface physics, thin films

Effect of interaction in the Ga–As–O system on the morphology of a GaAs surface during molecular-beam epitaxy

O. A. Ageev, S. V. Balakirev, M. S. Solodovnik, M. M. Eremenko

Institute of Nanotechnologies, Electronics and Equipment Engineering
Abstract: A thermodynamic analysis of processes of interphase interaction in the Ga–As–O system has been performed and their theoretical laws have been determined, taking into account nonlinear thermal physical properties of the compounds, the oxide film compositions, and modes of molecular-beam epitaxy of GaAs. The processes of interaction of the native oxide of GaAs with the substrate material and also with Ga and As$_4$ from a vapor gaseous phase have been studied experimentally. The experimental results correlate with the results of the thermodynamic analysis. The laws of influence of the removal of the proper oxide on the evolution of the GaAs surface morphology under conditions of the molecular-beam epitaxy have been proposed.
Keywords: GaAs, Oxide Film, GaAs Surface, Gallium Oxide, RHEED Pattern.
Received: 18.08.2015
English version:
Physics of the Solid State, 2016, Volume 58, Issue 5, Pages 1045–1052
DOI: https://doi.org/10.1134/S1063783416050024
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: O. A. Ageev, S. V. Balakirev, M. S. Solodovnik, M. M. Eremenko, “Effect of interaction in the Ga–As–O system on the morphology of a GaAs surface during molecular-beam epitaxy”, Fizika Tverdogo Tela, 58:5 (2016), 1011–1018; Phys. Solid State, 58:5 (2016), 1045–1052
Citation in format AMSBIB
\Bibitem{AgeBalSol16}
\by O.~A.~Ageev, S.~V.~Balakirev, M.~S.~Solodovnik, M.~M.~Eremenko
\paper Effect of interaction in the Ga--As--O system on the morphology of a GaAs surface during molecular-beam epitaxy
\jour Fizika Tverdogo Tela
\yr 2016
\vol 58
\issue 5
\pages 1011--1018
\mathnet{http://mi.mathnet.ru/ftt9994}
\elib{https://elibrary.ru/item.asp?id=27368627}
\transl
\jour Phys. Solid State
\yr 2016
\vol 58
\issue 5
\pages 1045--1052
\crossref{https://doi.org/10.1134/S1063783416050024}
Linking options:
  • https://www.mathnet.ru/eng/ftt9994
  • https://www.mathnet.ru/eng/ftt/v58/i5/p1011
  • This publication is cited in the following 17 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Fizika Tverdogo Tela Fizika Tverdogo Tela
     
      Contact us:
     Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024