V. I. Talanin, I. E. Talanin, “Complex formation in semiconductor silicon within the framework of the Vlasov model of a solid state”, Fizika Tverdogo Tela, 58:10 (2016), 1977–1981; Phys. Solid State, 58:10 (2016), 2050

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Fizika Tverdogo Tela, 2016, Volume 58, Issue 10, Pages 1977–1981 (Mi ftt9823)

This article is cited in 5 scientific papers (total in 5 papers)

Impurity centers

Complex formation in semiconductor silicon within the framework of the Vlasov model of a solid state

V. I. Talanin, I. E. Talanin

Zaporizhzhya Institute of Economics and Information Technologies, Zaporizhzhya, Ukraine

Full-text PDF (122 kB) Citations (5)

Abstract: The formation of silicon–carbon and silicon–oxygen complexes during cooling after the growth of dislocation-free silicon single crystals has been calculated using the Vlasov model of crystal formation. It has been confirmed that the complex formation begins in the vicinity of the crystallization front. It has been shown that the Vlasov model of a solid state can be used not only for the investigation of hypothetical ideal crystals, but also for the description of the formation of a defect structure of real crystals.

Received: 09.02.2016
Revised: 13.03.2016

English version:
Physics of the Solid State, 2016, Volume 58, Issue 10, Pages 2050–2054
DOI: https://doi.org/10.1134/S1063783416100371

Bibliographic databases:

Document Type: Article

Language: Russian

Citation: V. I. Talanin, I. E. Talanin, “Complex formation in semiconductor silicon within the framework of the Vlasov model of a solid state”, Fizika Tverdogo Tela, 58:10 (2016), 1977–1981; Phys. Solid State, 58:10 (2016), 2050–2054

Citation in format AMSBIB

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\by V.~I.~Talanin, I.~E.~Talanin

\paper Complex formation in semiconductor silicon within the framework of the Vlasov model of a solid state

\jour Fizika Tverdogo Tela

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\vol 58

\issue 10

\pages 1977--1981

\mathnet{http://mi.mathnet.ru/ftt9823}

\elib{https://elibrary.ru/item.asp?id=27368784}

\transl

\jour Phys. Solid State

\yr 2016

\vol 58

\issue 10

\pages 2050--2054

\crossref{https://doi.org/10.1134/S1063783416100371}

Linking options:

https://www.mathnet.ru/eng/ftt9823

https://www.mathnet.ru/eng/ftt/v58/i10/p1977

This publication is cited in the following 5 articles:

Rui Li, Xinyu Gu, Xiaohe Lin, Yong Wu, “MRCI+Q calculations on electronic structure and spectroscopy of low-lying electronic states of silicon monobromide including spin-orbit coupling effect”, Journal of Quantitative Spectroscopy and Radiative Transfer, 2024, 109207
Wen Jiang, Rui Li, Long Ding, Jianlei Xue, Bing Yan, B.F. Minaev, “Theoretical study on low-lying states of silicon iodide:MRCI+Q calculation including spin-orbit coupling”, Journal of Quantitative Spectroscopy and Radiative Transfer, 310 (2023), 108713
V.I. Talanin, I.E. Talanin, “Complexation in germanium in accordance with Vlasov's model for solids”, Journal of Crystal Growth, 552 (2020), 125928
V. I. Talanin, I. E. Talanin, “High-Temperature Precipitation of Impurities within the Vlasov Model for Solids”, Crystallogr. Rep., 64:4 (2019), 581
Vitalyi Igorevich Talanin, Igor Evgenievich Talanin, Vladislav Igorevich Lashko, New Research on Silicon - Structure, Properties, Technology, 2017

Citing articles in Google Scholar: Russian citations, English citations
Related articles in Google Scholar: Russian articles, English articles

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