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This article is cited in 4 scientific papers (total in 4 papers)
Impurity centers
Complex formation in semiconductor silicon within the framework of the Vlasov model of a solid state
V. I. Talanin, I. E. Talanin Zaporizhzhya Institute of Economics and Information Technologies, Zaporizhzhya, Ukraine
Abstract:
The formation of silicon–carbon and silicon–oxygen complexes during cooling after the growth of dislocation-free silicon single crystals has been calculated using the Vlasov model of crystal formation. It has been confirmed that the complex formation begins in the vicinity of the crystallization front. It has been shown that the Vlasov model of a solid state can be used not only for the investigation of hypothetical ideal crystals, but also for the description of the formation of a defect structure of real crystals.
Received: 09.02.2016 Revised: 13.03.2016
Citation:
V. I. Talanin, I. E. Talanin, “Complex formation in semiconductor silicon within the framework of the Vlasov model of a solid state”, Fizika Tverdogo Tela, 58:10 (2016), 1977–1981; Phys. Solid State, 58:10 (2016), 2050–2054
Linking options:
https://www.mathnet.ru/eng/ftt9823 https://www.mathnet.ru/eng/ftt/v58/i10/p1977
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Abstract page: | 21 | Full-text PDF : | 7 |
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