Electrical conductivity in single crystals of GaSe$_{x}$Te$_{1-x}$ solid solutions in strong electrical fields

This paper presents some results of studying the Poole–Frenkel effect with allowance for shielding in layered GaSe and GaTe single crystals and their solid solutions in strong electrical fields of up to 10$^5$ V/cm at temperatures of 103–250 K. According to the relationship $\bigl(\frac{\sigma}{\sigma(0)}\bigr)^{1/2}\lg\frac{\sigma}{\sigma(0)}=E\sqrt{\frac{\varepsilon}{4\pi n(0)kT}}$, there exists a linear dependence between $\bigl(\frac{\sigma}{\sigma(0)}\bigr)^{1/2}\lg\frac{\sigma}{\sigma(0)}$ and the electrical field $E$ ($\sigma$ is the electrical conductivity in strong electrical fields, and $\sigma(0)$ is the electrical conductivity in the ohmic region). The slopes of these lines have been determined at different temperatures (103–250 K) by estimating the concentration of current carriers $n(0)$ = 3 $\times$ 10$^{13}$–5 $\times$ 10$^{15}$ cm$^{-3}$ in the ohmic region of the electrical conductivity of solid solutions of layered GaSe$_{x}$Te$_{1-x}$ single crystals ($x$ = 1.00, 0.95, 0.90, 0.80, 0.70, 0.30, 0.20, 0.10, 0).