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This article is cited in 3 scientific papers (total in 3 papers)
Semiconductors
Electron transfer in the structure of a photorefractive doped Bi$_{12}$TiO$_{20}$:Ru crystal
V. T. Avanesyan, K. I. Paima, V. M. Stozharov Herzen State Pedagogical University of Russia, St. Petersburg
Abstract:
The ac conductivity of Bi$_{12}$TiO$_{20}$:Ru crystals has been studied in the frequency range 10$^{2}$–10$^{6}$ Hz and at temperatures 293–773 K. The experimental data have been analyzed in the framework of the model of correlated barrier hops. In this material, the potential barriers are due to the existence of a block structure, crystal lattice defects, and also the presence of a ruthenium impurity. The microparameters characterizing the charge transfer in doped bismuth titanate single crystals have been determined.
Received: 28.09.2016
Citation:
V. T. Avanesyan, K. I. Paima, V. M. Stozharov, “Electron transfer in the structure of a photorefractive doped Bi$_{12}$TiO$_{20}$:Ru crystal”, Fizika Tverdogo Tela, 59:6 (2017), 1056–1059; Phys. Solid State, 59:6 (2017), 1076–1079
Linking options:
https://www.mathnet.ru/eng/ftt9543 https://www.mathnet.ru/eng/ftt/v59/i6/p1056
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