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This article is cited in 4 scientific papers (total in 4 papers)
Semiconductors
Dielectric losses and charge transfer in antimony-doped TlGaS$_{2}$ single crystal
S. M. Asadova, S. N. Mustafaevab a Institute of Catalysis and Inorganic Chemistry, Azerbaijan National Academy of Sciences, Baku
b Institute of Physics Azerbaijan Academy of Sciences, Baku, Azerbaijan
Abstract:
Effect of semimetallic antimony (0.5 mol % Sb) on the dielectric properties and ac-conductivity of TlGaS$_{2}$-based single crystals grown by the Bridgman–Stockbarger method has been studied. The experimental results on the frequency dispersion of dielectric coefficients and the conductivity of TlGa$_{0.995}$Sb$_{0.005}$S$_{2}$ single crystals allowed the revealing of the dielectric loss nature, the charge transfer mechanism, and the estimation of the parameters of the states localized in the energy gap. The antimony-doping of the TlGaS$_{2}$ single crystal leads to an increase in the density of states near the Fermi level and a decrease in the average time and average distance of hopes.
Received: 19.09.2017 Revised: 25.09.2017
Citation:
S. M. Asadov, S. N. Mustafaeva, “Dielectric losses and charge transfer in antimony-doped TlGaS$_{2}$ single crystal”, Fizika Tverdogo Tela, 60:3 (2018), 495–498; Phys. Solid State, 60:3 (2018), 499–503
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https://www.mathnet.ru/eng/ftt9268 https://www.mathnet.ru/eng/ftt/v60/i3/p495
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Abstract page: | 34 | Full-text PDF : | 12 |
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