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This article is cited in 12 scientific papers (total in 12 papers)
Semiconductors
Thermoelectric properties of a ferromagnetic semiconductor based on a Dirac semimetal Cd$_{3}$As$_{2}$ under high pressure
N. V. Melnikovaa, A. V. Tebenkova, G. V. Sukhanovaa, A. N. Babushkina, L. A. Saypulaevab, V. S. Zakhvalinskiic, S. F. Gabibovb, A. G. Alibekovb, A. Yu. Mollaevb a Institute of Natural Sciences and Mathematics, Ural Federal University
b Daghestan Institute of Physics after Amirkhanov, Makhachkala, Dagestan, Russia
c National Research University "Belgorod State University"
Abstract:
The pressure dependences of thermal emf (a parameter that ranks among the most sensitive to phase transformations) are studied for the purpose of identifying baric phase transitions in the 10–50 GPa interval in the Cd$_{3}$As$_{2}$ + MnAs (44.7% MnAs) structure formed by ferromagnetic MnAs granules in a semiconductor Cd$_{3}$As$_{2}$ matrix.
Received: 20.09.2017
Citation:
N. V. Melnikova, A. V. Tebenkov, G. V. Sukhanova, A. N. Babushkin, L. A. Saypulaeva, V. S. Zakhvalinskii, S. F. Gabibov, A. G. Alibekov, A. Yu. Mollaev, “Thermoelectric properties of a ferromagnetic semiconductor based on a Dirac semimetal Cd$_{3}$As$_{2}$ under high pressure”, Fizika Tverdogo Tela, 60:3 (2018), 490–494; Phys. Solid State, 60:3 (2018), 494–498
Linking options:
https://www.mathnet.ru/eng/ftt9267 https://www.mathnet.ru/eng/ftt/v60/i3/p490
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