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This article is cited in 1 scientific paper (total in 1 paper)
Dielectrics
Structure and properties of SiO$_{x}$ films prepared by chemical etching of amorphous alloy ribbons
V. A. Fedorova, A. D. Bereznera, A. I. Beskrovnyib, T. N. Fursovac, A. V. Pavlikovd, A. V. Bazhenovc a Tambov State University named after G.R. Derzhavin
b Joint Institute for Nuclear Research, Dubna, Moscow region
c Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow region
d Lomonosov Moscow State University
Abstract:
The structure and the physical properties of amorphous SiO$_{x}$ films prepared by chemical etching of an iron-based amorphous ribbon alloy have been studied. The neutron diffraction and also the atomicforce and electron microscopy show that the prepared visually transparent films have amorphous structure, exhibit dielectric properties, and their morphology is similar to that of opals. The samples have been studied by differential scanning calorimetry, Raman and IR spectroscopy before and after their heat treatment. It is found that annealing of the films in air at a temperature of 1273 K leads to a change in their chemical compositions: an amorphous SiO$_2$ compound with inclusions of SiO$_2$ nanocrystals (crystobalite) forms.
Received: 19.09.2017
Citation:
V. A. Fedorov, A. D. Berezner, A. I. Beskrovnyi, T. N. Fursova, A. V. Pavlikov, A. V. Bazhenov, “Structure and properties of SiO$_{x}$ films prepared by chemical etching of amorphous alloy ribbons”, Fizika Tverdogo Tela, 60:4 (2018), 701–705; Phys. Solid State, 60:4 (2018), 705–709
Linking options:
https://www.mathnet.ru/eng/ftt9232 https://www.mathnet.ru/eng/ftt/v60/i4/p701
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