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This article is cited in 1 scientific paper (total in 1 paper)
Semiconductors
Single-photon emission from InAs/AlGaAs quantum dots
M. V. Rakhlina, K. G. Belyaeva, G. V. Klimkoa, I. S. Mukhinbc, S. V. Ivanova, A. A. Toropova a Ioffe Institute, St. Petersburg
b Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
c St. Petersburg National Research University of Information Technologies, Mechanics and Optics
Abstract:
The results of investigation of the radiative characteristics of heterostructures with InAs/AlGaAs quantum dots (QDs) grown by molecular beam epitaxy have been presented. The properties of single QDs were determined by spectroscopy of micro-photoluminescence in cylindrical mesa-structures with a diameter of 200–1000 nm or columnar microresonators with distributed Bragg mirrors. The single-photon nature of the radiation is confirmed by measurements and analysis of the second-order correlation function $g^{2}(\tau)$ in a wide spectral range from 630 to 730 nm.
Received: 02.11.2017
Citation:
M. V. Rakhlin, K. G. Belyaev, G. V. Klimko, I. S. Mukhin, S. V. Ivanov, A. A. Toropov, “Single-photon emission from InAs/AlGaAs quantum dots”, Fizika Tverdogo Tela, 60:4 (2018), 687–690; Phys. Solid State, 60:4 (2018), 691–694
Linking options:
https://www.mathnet.ru/eng/ftt9229 https://www.mathnet.ru/eng/ftt/v60/i4/p687
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