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Fizika Tverdogo Tela, 2018, Volume 60, Issue 8, Pages 1556–1565
DOI: https://doi.org/10.21883/FTT.2018.08.46242.22Gr (Mi ftt9104) 		 
This article is cited in 1 scientific paper (total in 1 paper)

International school-seminar ''Excitons in crystals and semiconductor nanostructures'', dedicated to the 120th anniversary of the birth of E. F. Gross, St. Petersburg, October 10-12, 2017
Semiconductors

Energy structure of an individual Mn acceptor in GaAs : Mn

G. S. Dimitrieva, I. V. Krainovab, V. F. Sapegaa, N. S. Averkieva, J. Debusc, E. Lähderantab

a Ioffe Institute, St. Petersburg
b Lappeenranta University of Technology, Lappeenranta, Finland
c Experimentelle Physik II, Universität Dortmund
Full-text PDF (247 kB) Citations (1)
DOI: https://doi.org/10.21883/FTT.2018.08.46242.22Gr
Abstract: The energy structure of the Mn acceptor, which is a complex of Mn2+ ion plus valence band hole, is investigated in the external magnetic field and under presence of an uniaxial stress has been studied. The spin-flip Raman spectra are studied under resonant excitation of exciton bound to the Mn acceptor. The gfactors of the ground F = 1 and the first excited F = 2 states are determined and selection rules for the optical transitions between the acceptor states are described. The value of the random field (stress or electric field) acting on manganese acceptor and the deformation potential for the exchange interaction constant of the Mn2+ + hole complex are obtained. A theoretical model is developed that takes into account the influence of random internal and uniaxial external stress and magnetic field. The proposed model describes well the lines of spin-flip Raman scattering of Mn acceptor.
Funding agency Grant number
Russian Foundation for Basic Research 15-52-12017 ННИО-а
Ministry of Education and Science of the Russian Federation 14.Z50.31.0021
Russian Academy of Sciences - Federal Agency for Scientific Organizations 5
English version:
Physics of the Solid State, 2018, Volume 60, Issue 8, Pages 1568–1577
DOI: https://doi.org/10.1134/S106378341808005X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: G. S. Dimitriev, I. V. Krainov, V. F. Sapega, N. S. Averkiev, J. Debus, E. Lähderanta, “Energy structure of an individual Mn acceptor in GaAs : Mn”, Fizika Tverdogo Tela, 60:8 (2018), 1556–1565; Phys. Solid State, 60:8 (2018), 1568–1577
Citation in format AMSBIB
\Bibitem{DimKraSap18}
\by G.~S.~Dimitriev, I.~V.~Krainov, V.~F.~Sapega, N.~S.~Averkiev, J.~Debus, E.~L\"ahderanta
\paper Energy structure of an individual Mn acceptor in GaAs : Mn
\jour Fizika Tverdogo Tela
\yr 2018
\vol 60
\issue 8
\pages 1556--1565
\mathnet{http://mi.mathnet.ru/ftt9104}
\crossref{https://doi.org/10.21883/FTT.2018.08.46242.22Gr}
\elib{https://elibrary.ru/item.asp?id=35269516}
\transl
\jour Phys. Solid State
\yr 2018
\vol 60
\issue 8
\pages 1568--1577
\crossref{https://doi.org/10.1134/S106378341808005X}
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  • https://www.mathnet.ru/eng/ftt/v60/i8/p1556
    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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