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This article is cited in 10 scientific papers (total in 10 papers)
International school-seminar ''Excitons in crystals and semiconductor nanostructures'', dedicated to the 120th anniversary of the birth of E. F. Gross, St. Petersburg, October 10-12, 2017
Semiconductors
Exciton recombination and spin dynamics in indirect-gap quantum wells and quantum dots
T. S. Shamirzaevab a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Ural Federal University named after the First President of Russia B. N. Yeltsin, Ekaterinburg
Abstract:
The behavior of excitons in heterostructures with indirect-gap GaAs/AlAs quantum wells and (In, Al)As/AlAs quantum dots is discussed. The possibilities of controlled change of the exciton radiative recombination time in the range from dozens of nanoseconds to dozens of microseconds, experimental study of the spin dynamics of long-lived localized excitons, and use of the optical resonant methods for exciting the indirect-band exciton states are demonstrated.
Citation:
T. S. Shamirzaev, “Exciton recombination and spin dynamics in indirect-gap quantum wells and quantum dots”, Fizika Tverdogo Tela, 60:8 (2018), 1542–1555; Phys. Solid State, 60:8 (2018), 1554–1567
Linking options:
https://www.mathnet.ru/eng/ftt9103 https://www.mathnet.ru/eng/ftt/v60/i8/p1542
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Abstract page: | 38 | Full-text PDF : | 12 |
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