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This article is cited in 4 scientific papers (total in 4 papers)
International Conference ''Mechanisms and Nonlinear Problems of Nucleation, Growth of Crystals and Thin Films'' dedicated to the memory of the outstanding theoretical physicist Professor V.V. Slezov (Proceedings) St. Petersburg, July 1-5, 2019
Semiconductors
Effect of gamma irradiation on conductivity of Cd1−xFexTe
M. A. Mehrabovaa, H. R. Nuriyevb, H. S. Orujovbc, N. H. Hasanovd, T. I. Кеrimovaa, A. A. Abdullayevac, A. I. Kazimovae a Institute of Radiation Problems of ANAS Baku, Baku, Azerbaijan
b Institute of Physics of ANAS named after academician G.M. Abdullayev,
Baku, Azerbaijan
c Azerbaijan Technical University, Baku, Azerbaijan
d Baku State University, Baku, Azerbaijan
e Ganja State University, Baku Azerbaijan
Abstract:
The effect of γ-irradiation at the dose Dγ = 605.6 kGy on the temperature dependences of conductivity and dielectric permittivity of Cd1−xFexTe semimagnetic semiconductors were investigated. The character of the ε′(T) dependences of the irradiated Cd1−xFexTe changes: there is a drop in the curves in the temperature range of 300/400 K at measurement frequencies 25 Hz–1 MHz, and ε' increases by 20 times. In the σ(T) dependence, at all measurement frequencies a maximum appears at a temperature of 400 K and conductivity increases by 40 times. We assume that the character of the temperature dependences of dielectric permittivity and conductivity corresponds to the ionic conductivity.
Keywords:
semimagnetic semiconductors, dielectric permittivity, conductivity, measurement frequencies, γ-irradiation.
Received: 30.06.2019 Revised: 30.06.2019 Accepted: 01.07.2019
Citation:
M. A. Mehrabova, H. R. Nuriyev, H. S. Orujov, N. H. Hasanov, T. I. Кеrimova, A. A. Abdullayeva, A. I. Kazimova, “Effect of gamma irradiation on conductivity of Cd1−xFexTe”, Fizika Tverdogo Tela, 61:12 (2019), 2312; Phys. Solid State, 61:12 (2019), 2306–2309
Linking options:
https://www.mathnet.ru/eng/ftt8554 https://www.mathnet.ru/eng/ftt/v61/i12/p2312
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