Current relaxation in TlGa$_{1-x}$Dy$_{x}$Se$_{2}$ ($x$ = 0.01; 0.03) single crystals

The low-temperature relaxation processes in TlGa$_{1-x}$Dy$_{x}$Se$_{2}$ ($x$ = 0.01; 0.03) single crystals have been studied experimentally. The physical parameters which characterize the electron processes in Ag–TlGa$_{1-x}$Dy$_{x}$Se$_{2}$–Ag samples have been determined using the estafette transfer mechanism of the charge formed at deep traps due to the carrier injection from a contact: the effective mobility of the charge transferred due to deep centers, the sample contact capacity, the region of accumulation of the charge in the samples, the contact charging constant, and the flight time of charge carriers through the sample.