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This article is cited in 7 scientific papers (total in 7 papers)
Semiconductors
Control of properties of diamond-like silicon–carbon films
A. I. Popovab, A. D. Barinovab, V. M. Yemetsa, T. S. Chukanovaa, M. L. Shupegina a National Research University "Moscow Power Engineering Institute"
b Institute of Nanotechnologies of Microelectronics, Russian Academy of Sciences, Moscow, Russia
Abstract:
The possibilities of controlling the electrophysical and mechanical properties of amorphous diamond-like silicon-carbon films by the methods of structural, chemical and structural-chemical modification are considered. The factors of the structural modification were the bias voltage and its frequency during the synthesis of films, the argon pressure in the vacuum chamber, and precursors with different molecular structures. For chemical and structural-chemical modification, transition metals were introduced into the film with a concentration of up to 30–35 at.% The high efficiency of controlling the physical properties of the films by the considered methods is shown.
Keywords:
silicon-carbon films, polyphenylmethylsiloxane, polymethylsiloxane, structural chemical and structural-chemical modification, nanocomposites, electrical conductivity, nanohardness.
Received: 28.05.2020 Revised: 28.05.2020 Accepted: 04.06.2020
Citation:
A. I. Popov, A. D. Barinov, V. M. Yemets, T. S. Chukanova, M. L. Shupegin, “Control of properties of diamond-like silicon–carbon films”, Fizika Tverdogo Tela, 62:10 (2020), 1612–1617; Phys. Solid State, 62:10 (2020), 1780–1786
Linking options:
https://www.mathnet.ru/eng/ftt8281 https://www.mathnet.ru/eng/ftt/v62/i10/p1612
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