Resistive switching and memory effects in composite films based on graphene oxide in a matrix of organometallic perovskites

The effect of resistive switching in composite films based on organometallic perovskites CH$_{3}$NH$_{3}$PbBr$_{3}$ and CH$_{3}$NH$_{3}$PbI$_{3}$ with graphene oxide (GO) particles with a concentration of 1–3 wt.% and a layer of fullerene derivative [60]PCBM is studied. It was found that the effect of resistive switching in Ag/[60]PCBM/CH$_{3}$NH$_{3}$PbBr$_{3}$(I$_{3}$) : GO/PEDOT : PSS/ITO/glass films manifests itself in a sharp change in the electrical resistance from a low-conductive to a high-conductive state when both positive and negative bias is applied on Ag and ITO electrodes (0.1–1.0 V) both in the dark and when illuminated by a simulated sunlight. It is assumed that the mechanism of resistive switching is associated with the capture and accumulation of charge carriers in GO particles due to the reduction/oxidation processes. The investigated composite films are promising for the creation of non-volatile memory cells.