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Fizika Tverdogo Tela, 2021, Volume 63, Issue 5, Pages 602–605
DOI: https://doi.org/10.21883/FTT.2021.05.50807.262 (Mi ftt8127) 		 
Semiconductors

Tensostimulated effect in a doped and heat-treated silicon at an oriented deformation

O. O. Mamatkarimova, O. Khimmatkulovb, I. G. Tursunovcd

a Namangan Engineering and Technology Institute, Namangan, Uzbekistan
b Tashkent State Technical University, Tashkent, Uzbekistan
c Chirchiq State Pedagogical Institute, Chirchik, Uzbekistan
d National University of Uzbekistan named after M. Ulugbek, Tashkent, Uzbekistan
Full-text PDF (139 kB)
DOI: https://doi.org/10.21883/FTT.2021.05.50807.262
Abstract: The tensostimulated effect in heat-treated and doped silicon was investigated. It is shown that uniaxial compression in the [111] direction leads to the decay of thermal donors and the hysteresis development in the dependences of the resistivity on the compression value. It was found that the strain-stimulated effect in manganese-compensated silicon samples is due to simultaneous changes in the concentration and mobility of current carriers.
Keywords: deformation, tensoresistance, silicon, alloying, uniaxial.
Received: 17.12.2020
Revised: 17.12.2020
Accepted: 14.01.2021
English version:
Physics of the Solid State, 2021, Volume 63, Issue 5, Pages 738–741
DOI: https://doi.org/10.1134/S1063783421050127
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: O. O. Mamatkarimov, O. Khimmatkulov, I. G. Tursunov, “Tensostimulated effect in a doped and heat-treated silicon at an oriented deformation”, Fizika Tverdogo Tela, 63:5 (2021), 602–605; Phys. Solid State, 63:5 (2021), 738–741
Citation in format AMSBIB
\Bibitem{MamKhiTur21}
\by O.~O.~Mamatkarimov, O.~Khimmatkulov, I.~G.~Tursunov
\paper Tensostimulated effect in a doped and heat-treated silicon at an oriented deformation
\jour Fizika Tverdogo Tela
\yr 2021
\vol 63
\issue 5
\pages 602--605
\mathnet{http://mi.mathnet.ru/ftt8127}
\crossref{https://doi.org/10.21883/FTT.2021.05.50807.262}
\elib{https://elibrary.ru/item.asp?id=46348321}
\transl
\jour Phys. Solid State
\yr 2021
\vol 63
\issue 5
\pages 738--741
\crossref{https://doi.org/10.1134/S1063783421050127}
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