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Fizika Tverdogo Tela, 2021, Volume 63, Issue 5, Pages 606–609
DOI: https://doi.org/10.21883/FTT.2021.05.50808.269 (Mi ftt8128) 		 
Semiconductors

Effect of electron and hole doping on the transport characteristics of chalcogenide systems

O. B. Romanovaa, S. S. Aplesninab, L. V. Udodab

a L. V. Kirensky Institute of Physics, Siberian Branch of the Russian Academy of Sciences, Krasnoyarsk, Russia
b M. F. Reshetnev Siberian State University of Science and Technologies, Krasnoyarsk, Russia
Full-text PDF (179 kB)
DOI: https://doi.org/10.21883/FTT.2021.05.50808.269
Abstract: The electrical properties of the Ag$_{0.01}$Mn$_{0.99}$S and Tm$_{0.01}$Mn$_{0.99}$S semiconductor compounds and the Hall effect in them have been investigated in the temperature range of 80–400 K in a magnetic field of 12 kOe. Using the I–V characteristics, the conductivity mechanism depending on the doping type and concentration has been established. Upon substitution of silver for manganese, the Mott-type conductivity has been found, while substitution of thulium causes the ohmic conductivity. The mobility and type of carriers have been determined from the Hall constant data.
Keywords: semiconductors, conductivity, Hall constant, mobility.
Funding agency Grant number
Russian Foundation for Basic Research 20-52-00005
This study was supported by the Russian Foundation for Basic Research and the Belarusian Republican Foundation for Basic Research, project no. 20-52-00005.
Received: 24.12.2020
Revised: 24.12.2020
Accepted: 19.01.2021
English version:
Physics of the Solid State, 2021, Volume 63, Issue 5, Pages 754–757
DOI: https://doi.org/10.1134/S1063783421050152
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: O. B. Romanova, S. S. Aplesnin, L. V. Udod, “Effect of electron and hole doping on the transport characteristics of chalcogenide systems”, Fizika Tverdogo Tela, 63:5 (2021), 606–609; Phys. Solid State, 63:5 (2021), 754–757
Citation in format AMSBIB
\Bibitem{RomAplUdo21}
\by O.~B.~Romanova, S.~S.~Aplesnin, L.~V.~Udod
\paper Effect of electron and hole doping on the transport characteristics of chalcogenide systems
\jour Fizika Tverdogo Tela
\yr 2021
\vol 63
\issue 5
\pages 606--609
\mathnet{http://mi.mathnet.ru/ftt8128}
\crossref{https://doi.org/10.21883/FTT.2021.05.50808.269}
\elib{https://elibrary.ru/item.asp?id=46348322}
\transl
\jour Phys. Solid State
\yr 2021
\vol 63
\issue 5
\pages 754--757
\crossref{https://doi.org/10.1134/S1063783421050152}
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