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This article is cited in 1 scientific paper (total in 1 paper)
Surface physics, thin films
Effect of oxygen partial pressure on the stoichiometric composition of titanium oxide films during magnetron sputtering
S. V. Bulyarskii, G. G. Gusarov, D. A. Koiva, G. A. Rudakov Institute of Nanotechnologies of Microelectronics, Russian Academy of Sciences
Abstract:
This paper presents the results of the experiments on synthesizing nonstoichiometric films of titanium oxides at various partial pressures of oxygen and discharge powers in the reactor during magnetron sputtering and also the results of their thermodynamic analysis. An increase in the partial pressure of oxygen and a decrease in the partial pressure of titanium during the film synthesis leads o the phase transition of titanium monoxide to dioxide, the structural changes in the film from fine-crystalline to amorphous structure, and also to a change in the defect ratio in the film material. In this case, the electrical resistance of the films increases by one order of value. This fact is shown theoretically and experimentally to be related to a change in the stoichiometric compositions of the films.
Keywords:
titanium dioxide, titanium monoxide, partial pressure of oxygen and titanium, stoichiometry, phase and structural transition, hopping conductivity.
Received: 25.05.2021 Revised: 25.05.2021 Accepted: 25.05.2021
Citation:
S. V. Bulyarskii, G. G. Gusarov, D. A. Koiva, G. A. Rudakov, “Effect of oxygen partial pressure on the stoichiometric composition of titanium oxide films during magnetron sputtering”, Fizika Tverdogo Tela, 63:10 (2021), 1694–1700; Phys. Solid State, 63:11 (2021), 1611–1618
Linking options:
https://www.mathnet.ru/eng/ftt8010 https://www.mathnet.ru/eng/ftt/v63/i10/p1694
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