Study of relaxers distribution in thin layers of amorphous MoTe$_{2}$

Recently, transition metal dichalcogenides have come into the spotlight after they have been found to become direct semiconductor in the monolayer level. The paper presents the results of the study of the relaxers distribution in layers of amorphous molybdenum ditelluride obtained by high-frequency magnetron sputtering. According to the obtained values of relaxation parameters $\alpha$ and $\beta$, the transition from an asymmetric distribution to a symmetric distribution of relaxators at temperature $T=283$ K can be stated. The existence of maxima on the temperature dependence of relaxation times $\tau_{max}=f(T)$ was found, which can be associated with phase transitions in the studied system.