Аннотация:
Строится асимптотика решения сингулярно-возмущенной системы дифференциальных уравнений с особенностями в граничных условиях, встречающейся в теории полупроводниковых приборов.
Образец цитирования:
А. Б. Васильева, В. Г. Стельмах, “Сингулярно-возмущенные системы теории полупроводниковых приборов”, Ж. вычисл. матем. и матем. физ., 17:2 (1977), 339–348; U.S.S.R. Comput. Math. Math. Phys., 17:2 (1977), 48–58
Galina Kurina, Springer Proceedings in Physics, 315, Proceedings of the 2nd International Conference on Nonlinear Dynamics and Applications (ICNDA 2024), Volume 2, 2024, 220
Hao Zhang, Na Wang, “A class of singularly perturbed Robin boundary value problems in critical case”, Electron. J. Qual. Theory Differ. Equ., 2023, no. 34, 1
Andriy Bomba, Igor Moroz, “Prediction of the charge carriers stationary distribution in the active region of the p-i-n structures by the perturbation theory methods”, Bulletin of V.N. Karazin Kharkiv National University, series «Mathematical modeling. Information technology. Automated control systems», 2021, no. 50, 27
Ali Barkhordari, Hamid Reza Mashayekhi, Yashar Azizian-Kalandaragh, “Numerical and experimental study of a Back-Gated metal-semiconductor-metal photodetector using finite element method”, Physica B: Condensed Matter, 596 (2020), 412406
Na Wang, “A class of singularly perturbed delayed boundary value problem in the critical case”, Adv Differ Equ, 2015:1 (2015)
Christian Schmeiser, Andreas Unterreiter, The IMA Volumes in Mathematics and its Applications, 59, Semiconductors, 1994, 343
М. П. Белянин, А. Г. Никитин, “Асимптотическое исследование модели диода с сильно легированными приконтактными областями”, Ж. вычисл. матем. и матем. физ., 31:7 (1991), 1006–1019; M. P. Belyanin, A. G. Nikitin, “Asymptotic investigation of a diode model with strongly alloyed contact regions”, U.S.S.R. Comput. Math. Math. Phys., 31:7 (1991), 46–56
Christian Schmeiser, “Voltage-current characteristics of multidimensional semiconductor devices”, Quart. Appl. Math., 49:4 (1991), 753
Can E. Korman, Isaak D. Mayergoyz, “A globally convergent algorithm for the solution of the steady-state semiconductor device equations”, Journal of Applied Physics, 68:3 (1990), 1324
Christian Schmeiser, “On Strongly Reverse Biased Semiconductor Diodes”, SIAM J. Appl. Math., 49:6 (1989), 1734
Zhong-Mei Gu, N. N. Nefedov, R. E. O'Malley, Jr., “On Singular Singularly Perturbed Initial Value Problems”, SIAM J. Appl. Math., 49:1 (1989), 1
R. E. O'Malley, Jr., “On Nonlinear Singularly Perturbed Initial Value Problems”, SIAM Rev., 30:2 (1988), 193
Christian Schmeiser, Richard Weiss, “Asymptotic Analysis of Singular Singularly Perturbed Boundary Value Problems”, SIAM J. Math. Anal., 17:3 (1986), 560
Maximilian R. Maier, “An Adaptive Shooting Method for Singularly Perturbed Boundary Value Problems”, SIAM J. Sci. and Stat. Comput., 7:2 (1986), 418
Peter A. Markowich, “A Singular Perturbation Analysis of the Fundamental Semiconductor Device Equations”, SIAM J. Appl. Math., 44:5 (1984), 896
Peter A. Markowich, C. A. Ringhofer, “A Singularly Perturbed Boundary Value Problem Modelling a Semiconductor Device”, SIAM J. Appl. Math., 44:2 (1984), 231
Peter A. MARKOWICH, “A QUALITATIVE ANALYSIS OF THE FUNDAMENTAL SEMICONDUCTOR DEVICE EQUATIONS”, COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, 2:3 (1983), 97
Maximilian R. Maier, Donald R. Smith, “Numerical solution of a symmetric one-dimensional diode model”, Journal of Computational Physics, 42:2 (1981), 309
Uri Ascher, “Solving boundary-value problems with a spline-collocation code”, Journal of Computational Physics, 34:3 (1980), 401