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Nikolai A. Poklonski, Ilya I. Anikeev, Sergey A. Vyrko, Andrei G. Zabrodskii, “Calculation of the Activation Energy of Electrical ε2‐Conductivity of Weakly Compensated Semiconductors”, Physica Status Solidi (b), 2024
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Е. И. Гольдман, А. Э. Набиев, В. Г. Нарышкина, Г. В. Чучева, “О природе повышения подвижности электронов в канале инверсии у границы раздела кремний-окисел после полевого воздействия”, Физика и техника полупроводников, 53:1 (2019), 89–92 ; E. I. Goldman, A. E. Nabiyev, V. G. Naryshkina, G. V. Chucheva, “On the nature of the increase in the electron mobility in the inversion channel at the silicon–oxide interface after the field effect”, Semiconductors, 53:1 (2019), 85–88
П. В. Петров, И. А. Кокурин, Ю. Л. Иванов, Г. Э. Цырлин, В. Е. Седов, Н. С. Аверкиев, “Тонкая структура уровней и пьезоспектроскопия A $^{+}$ -центров в квантовых ямах GaAs/AlGaAs”, Физика твердого тела, 60:2 (2018), 333–340 ; P. V. Petrov, I. A. Kokurin, Yu. L. Ivanov, G. E. Cirlin, V. E. Sedov, N. S. Averkiev, “Fine structure of levels and piezospectroscopy of A $^{+}$ centers in GaAs/AlGaAs quantum wells”, Phys. Solid State, 30:2 (2018), 339–346
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A. L. Danilyuk, A. G. Trafimenko, A. K. Fedotov, I. A. Svito, S. L. Prischepa, “Negative differential resistance in n-type noncompensated silicon at low temperature”, Applied Physics Letters, 109:22 (2016)
Н. А. Поклонский, С. А. Вырко, А. И. Ковалев, А. Г. Забродский, “Квазиклассическая модель щели Хаббарда в слабо компенсированных полупроводниках”, Физика и техника полупроводников, 50:3 (2016), 302–312 ; N. A. Poklonskii, S. A. Vyrko, A. I. Kovalev, A. G. Zabrodskii, “A quasi-classical model of the Hubbard gap in lightly compensated semiconductors”, Semiconductors, 50:3 (2016), 299–308
R. Kh. Zhukavin, K. A. Kovalevsky, M. L. Orlov, V. V. Tsyplenkov, N. A. Bekin, A. N. Yablonskiy, P. A. Yunin, S. G. Pavlov, N. V. Abrosimov, H. -W. Hübers, H. H. Radamson, V. N. Shastin, “Terahertz-range spontaneous emission under the optical excitation of donors in uniaxially stressed bulk silicon and SiGe/Si heterostructures”, Semiconductors, 49:1 (2015), 13
A. Broniatowski, “Intervalley Scattering of Hot Electrons in Germanium at Millikelvin Temperatures”, J Low Temp Phys, 176:5-6 (2014), 860
A. Broniatowski, M.-C. Piro, S. Marnieros, L. Dumoulin, E. Olivieri, “ $\hbox {H}^{-}$ H - -Like Centers and Space-Charge Effects in Cryogenic Germanium Detectors for Dark Matter Search”, J Low Temp Phys, 176:5-6 (2014), 802
M.-C. Piro, A. Broniatowski, S. Marnieros, L. Dumoulin, E. Olivieri, “Hot Carrier Trapping in High-Purity and Doped Germanium Crystals at Millikelvin Temperatures”, J Low Temp Phys, 176:5-6 (2014), 796
V. Ch. Zhukovsky, V. D. Krevchik, A. B. Grunin, M. B. Semenov, R. V. Zaitsev, “The effect of an external electric field on the optical properties of a quantum-dot molecule with a resonant state of the D 2 - center”, Moscow Univ. Phys., 68:5 (2013), 397
A. Broniatowski, “Carrier Anisotropy and Impurity Scattering in Ge at mK Temperatures: Modeling and Comparison to Experiment”, J Low Temp Phys, 167:5-6 (2012), 1069
J. Domange, E. Olivieri, N. Fourches, A. Broniatowski, “Thermally-Stimulated Current Investigation of Dopant-Related D - and A + Trap Centers in Germanium for Cryogenic Detector Applications”, J Low Temp Phys, 167:5-6 (2012), 1131
Bernard Pajot, Springer Series in Solid-State Sciences, 158, Optical Absorption of Impurities and Defects in SemiconductingCrystals, 2009, 281
N. A. Poklonski, S. A. Vyrko, A. G. Zabrodskii, “Quasi-static capacitance of a weakly compensated semiconductor with hopping conduction (on the example of p-Si:B)”, Semiconductors, 41:1 (2007), 30
P. V. Petrov, Yu. L. Ivanov, A. E. Zhukov, “Molecular state of A + centers in GaAs/AlGaAs quantum well”, Semiconductors, 41:7 (2007), 828
N. A. Poklonski, S. A. Vyrko, A. G. Zabrodskiǐ, “The dipole model of narrowing of the energy gap between the Hubbard bands in slightly compensated semiconductors”, Semiconductors, 40:4 (2006), 394
N. A. Poklonskii, A. I. Syaglo, “Electrostatic model of the energy gap between Hubbard bands for boron atoms in silicon”, Semiconductors, 33:4 (1999), 391