Analytical drain current modeling and simulation of triple material gate-all-around heterojunction TFETs considering depletion regions

This paper deals with electrostatic behavior of triple-material gate-all-around hetero-junction tunneling field-effect transistors (TMGAA-HJTFET) device. The model is advantageous in apprehending a comparative study with the single-material gate-all-around hetero-junction tunneling field-effect transistors (SMGAA-HJTFET) in terms of surface potential, electric field, drain current, transconductance, and threshold voltage. The surface-potential distribution in partition regions along the channel is solved by using two-dimensional Poisson’s equation. By using the drift and diffusion current, drain current is derived, and $I_{\operatorname{On}}/I_{\operatorname{Off}}$ ratio of 10$^{11}$ is gained from analytical modeling and TCAD simulation. Transconductance and threshold voltage are derived from the tunneling current. The proposed model results are validated by the ATLAS TCAD simulation tool.