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Физика и техника полупроводников, 2020, том 54, выпуск 5, страница 458
(Mi phts6642)
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Эта публикация цитируется в 3 научных статьях (всего в 3 статьях)
Полупроводниковые структуры, низкоразмерные системы, квантовые явления
Effect of annealing on the dark and illuminated I(V) characterization of a ZnO : Ga|Cu$_2$O hetero-junction prepared by ultrasonic spray system
H. Trira, L. Radjehib, N. Sengougaa, T. Tibermacinea, L. Araba, W. Filalic, D. Abdelkaderb, N. Attafd a Laboratoire des Matériaux Semiconducteurs et
Métalliques, Université Mohammed Khider, 07000 Biskra, Algeria
b Laboratoire des Structures, Propriétés et Interactions Inter Atomiques (LASPI2A), Khenchela University, Algeria
c Centre de Développement des Technologies Avancées (CDTA), Algiers, Algeria
d Laboratoire couches minces et interfaces, Département de Physique, Faculté de Sciences exactes, Université de Fréres Mentouri, Constantine 1, Algeria
Аннотация:
This paper presents the Ultrasonic Spray Pyrolysis system fabrication of gallium-doped Zinc Oxide (ZnO : Ga)|Cuprous Oxide (Cu$_2$O) thin film hetero-junction. The deposition parameters were constant for ZnO : Ga and Cu$_2$O. Structural and optical properties of ZnO : Ga, Cu$_2$O and ZnO : Ga|Cu$_2$O hetero-junction were characterized by $X$-Ray Diffraction method and UV-Vis Spectrometry, respectively. SEM and FTIR were used to reveal the morphology and the nature of the chemical bonds. The electrical properties were measured by an Agilent I–V source meter. The ZnO : Ga|Cu$_2$O hetero-junction was annealed at 350, 400, and 450$^\circ$C and the current–voltage characteristics were measured. The band gaps of ZnO, Cu$_2$O, and ZnO : Ga|Cu$_2$O are $\sim$ 3.27 eV, $\sim$ 2.65 eV, and $\sim$ 3.29 eV, respectively. The annealing temperature improves the hetero-junction quality.
Ключевые слова:
ZnO : Ga|Cu$_2$O hetero-junction, ultrasonic spray pyrolysis, electrical properties, annealing.
Поступила в редакцию: 02.12.2019 Исправленный вариант: 30.12.2019 Принята в печать: 05.01.2020
Образец цитирования:
H. Trir, L. Radjehi, N. Sengouga, T. Tibermacine, L. Arab, W. Filali, D. Abdelkader, N. Attaf, “Effect of annealing on the dark and illuminated I(V) characterization of a ZnO : Ga|Cu$_2$O hetero-junction prepared by ultrasonic spray system”, Физика и техника полупроводников, 54:5 (2020), 458; Semiconductors, 54:5 (2020), 534–542
Образцы ссылок на эту страницу:
https://www.mathnet.ru/rus/phts6642 https://www.mathnet.ru/rus/phts/v54/i5/p458
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Страница аннотации: | 42 | PDF полного текста: | 7 |
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