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Физика и техника полупроводников, 2021, том 55, выпуск 7, страница 541
(Mi phts6614)
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Эта публикация цитируется в 5 научных статьях (всего в 5 статьях)
Электронные свойства полупроводников
Electron mobility in bulk $n$-doped SiC-polytypes 3C-SiC, 4H-SiC and 6H-SiC: a comparison
Cloves G. Rodrigues School of Exact Sciences and Computing, Pontifical Catholic University of Goiás, CP 86, 74605-010 Goiânia, Goiás, Brazil
Аннотация:
This communication presents a comparative study on the charge transport (in transient and steady state) in bulk $n$-type doped SiC-polytypes: 3C-SiC, 4H-SiC and 6H-SiC. The time evolution of the basic macrovariables: the “electron drift velocity” and the “non-equilibrium temperature” are obtained theoretically by using a Non-Equilibrium Quantum Kinetic Theory, derived from the method of Nonequilibrium Statistical Operator (NSO). The dependence on the intensity and orientation of the applied electric field of this macrovariables and mobility are derived and analyzed. From the results obtained in this paper, the most attractive of these semiconductors for applications requiring greater electronic mobility is the polytype 4H-SiC with the electric field applied perpendicular to the $c$-axis.
Ключевые слова:
SiC, 4H-SiC, 6H-SiC, 3C-SiC, charge transport.
Поступила в редакцию: 01.07.2020 Исправленный вариант: 01.07.2020 Принята в печать: 08.07.2020
Образец цитирования:
Cloves G. Rodrigues, “Electron mobility in bulk $n$-doped SiC-polytypes 3C-SiC, 4H-SiC and 6H-SiC: a comparison”, Физика и техника полупроводников, 55:7 (2021), 541; Semiconductors, 55:7 (2021), 625–632
Образцы ссылок на эту страницу:
https://www.mathnet.ru/rus/phts6614 https://www.mathnet.ru/rus/phts/v55/i7/p541
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Страница аннотации: | 50 | PDF полного текста: | 18 |
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