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Физика и техника полупроводников, 2021, том 55, выпуск 5, страница 473
(Mi phts6607)
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Физика полупроводниковых приборов
RF performance investigation of NiO pocket on Ga$_2$O$_3$-based hetero-MOSFET
N. Yadava, R. K. Chauhan Department of Electronics & Communication Engineering, MMMUT,
Gorakhpur, U.P., 273010 India
Аннотация:
In this paper, the performance of $p$-type NiO pocket on Ga$_2$O$_3$/Graphene and Ga$_2$O$_3$/Black phosphorous hetero-MOSFET has been investigated to find out its applicability in the wireless applications. To show the utility of the proposed devices, its analog/RF characteristics have been studied and compared to those of the experimentally demonstrated conventional Ga$_2$O$_3$ MOSFET. The large signal RF performances analysis has also been carried out by considering CW Class-A power measurements at 0.8 GHz using passive source and load tuning. The important figure of merits (FOMs) used in the analysis are intrinsic capacitances $C_{\mathrm{GS}}$ and $C_{\mathrm{GD}}$, cutoff frequency $f_{\mathrm{T}}$, output power gain GP, and power-added efficiency. The key idea behind this work is to propose a device which is efficient and shows low leakage current. All the analysis of proposed devices has been carried out using ATLAS TCAD simulator.
Ключевые слова:
wide band gap semiconductors, RFICs, high power FOMs, leakages, RF FOMs.
Поступила в редакцию: 27.01.2020 Исправленный вариант: 15.05.2020 Принята в печать: 12.11.2020
Образец цитирования:
N. Yadava, R. K. Chauhan, “RF performance investigation of NiO pocket on Ga$_2$O$_3$-based hetero-MOSFET”, Физика и техника полупроводников, 55:5 (2021), 473; Semiconductors, 55 (2021), S14–S21
Образцы ссылок на эту страницу:
https://www.mathnet.ru/rus/phts6607 https://www.mathnet.ru/rus/phts/v55/i5/p473
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