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Физика и техника полупроводников, 2021, том 55, выпуск 5, страница 441
(Mi phts6605)
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Эта публикация цитируется в 13 научных статьях (всего в 13 статьях)
Поверхность, границы раздела, тонкие пленки
Synthesis and characterization of Ni-doped ZnO thin films prepared by sol-gel spin-coating method
M. Ayachiab, F. Ayada, A. Djelloulb, L. Benharratb, S. Anasb a Université Mohammed Seddik Ben Yahia – Jijel
b Le Centre de Recherche en Technologie des Semi-conducteurs pour l’Energétique
Аннотация:
Ni-doped ZnO (ZnO:Ni) thin films were deposited onto glass substrate by sol-gel spin-coating method using zinc acetate dehydrate and nickel (II) chloride hexahydrate. The structural, morphological, and optical properties of ZnO : Ni thin films under various doping level of nickel were investigated using X-ray diffraction (XRD), ultraviolet– visible transmission spectra (UV-Vis), atomic force microscope (AFM), scanning electron microscopy (SEM) and Fourier transform infrared (FTIR) measurements. XRD patterns indicated that the deposited films had a crystalline hexagonal wurtzite structure with preferred orientation in the (0 0 2) plane when the grain size varied between 36.5 and 44.5 nm. All films were found to exhibit a good transparency in the visible range with the maximum transmittance of 95% and the optical band gap energies were found between 3.15 and 3.22 eV. The SEM morphology shows the non-doped and Ni-doped ZnO thin films are continuous, dense, and distributed over the entire area with good uniformity. All parameters procured for Ni : ZnO composite thin films propel the possibility of using composite thin films for transparent conducting electrode applications.
Ключевые слова:
ZnO : Ni, sol-gel spin-coating, structural, optical, morphological.
Поступила в редакцию: 27.10.2020 Исправленный вариант: 27.10.2020 Принята в печать: 28.12.2020
Образец цитирования:
M. Ayachi, F. Ayad, A. Djelloul, L. Benharrat, S. Anas, “Synthesis and characterization of Ni-doped ZnO thin films prepared by sol-gel spin-coating method”, Физика и техника полупроводников, 55:5 (2021), 441; Semiconductors, 55:5 (2021), 482–490
Образцы ссылок на эту страницу:
https://www.mathnet.ru/rus/phts6605 https://www.mathnet.ru/rus/phts/v55/i5/p441
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