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Физика и техника полупроводников, 2021, том 55, выпуск 4, страница 388
(Mi phts6603)
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Эта публикация цитируется в 1 научной статье (всего в 1 статье)
Изготовление, обработка, тестирование материалов и структур
Current–voltage, capacitance–voltage–temperature, and dlts studies of Ni|6H-SiC Schottky diode
A. Rabehiab, B. Akkala, M. Amrania, S. Tizia, Z. Benamaraa, H. Helala, A. Douarab, B. Nailb, A. Zianea a Laboratoire de Micro-électronique Appliquée.Université Djillali Liabès Sidi Bel Abbès, BP 89, 22000, Sidi Bel Abbés, Algeria
b Institute of Science and Technology, Tissemsilt University Center,
38000 Tissemsilt, Algeria
Аннотация:
In this paper, we give a systematical description of Ni|6H-SiC Schottky diode by current–voltage $I(V)$ characteristics at room temperature and capacitance–voltage $C(V)$ characteristics at various frequencies (10–800 kHz) and various temperatures (77–350 K). The $I(V)$ characteristics show a double-barrier phenomenon, which gives a low and high barrier height ($\phi_{bn}^{\operatorname{L}}$ = 0.91 eV, $\phi_{bn}^{\operatorname{H}}$ = 1.55 eV), with a difference of $\Delta\phi_{bn}$ = 0.64 eV. Also, low ideality factor $n^{\operatorname{L}}$ = 1.94 and high ideality factor $n^{\operatorname{H}}$ = 1.22 are obtained. The $C$–$V$–$T$ measurements show that the barrier height $\phi_{bn}$ decreases with decreasing of temperature and gives a temperature coefficient $\alpha$ = 1.0 $\times$ 10$^{-3}$ eV/K and $\phi_{bn}$ ($T$ = 0 K) = 1.32 eV. Deep-level transient spectroscopy (DLTS) has been used to investigate deep levels in the Ni|6H-SiC Schottky diode. The traps signatures such as activation energies $E_\alpha$ = 0.50 $\pm$ 0.07 eV, capture cross-section $\sigma$ = 1.8 $\times$ 10$^{-20}$ cm$^2$, and defect concentration $N_T$ = 6.2 $\times$ 10$^{13}$ cm$^{-3}$ were calculated from Arrhenius plots.
Ключевые слова:
silicon carbide, Schottky diodes, I–V, $C$–$V$–$T$, deep-level transient spectroscopy (DLTS).
Поступила в редакцию: 12.10.2020 Исправленный вариант: 12.10.2020 Принята в печать: 10.12.2020
Образец цитирования:
A. Rabehi, B. Akkal, M. Amrani, S. Tizi, Z. Benamara, H. Helal, A. Douara, B. Nail, A. Ziane, “Current–voltage, capacitance–voltage–temperature, and dlts studies of Ni|6H-SiC Schottky diode”, Физика и техника полупроводников, 55:4 (2021), 388; Semiconductors, 55:4 (2021), 446–454
Образцы ссылок на эту страницу:
https://www.mathnet.ru/rus/phts6603 https://www.mathnet.ru/rus/phts/v55/i4/p388
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Страница аннотации: | 42 | PDF полного текста: | 13 |
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