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Физика и техника полупроводников, 2021, том 55, выпуск 3, страница 285
(Mi phts6599)
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Физика полупроводниковых приборов
Improvement in electrical and 2DEG properties of Al$_{0.26}$Ga$_{0.74}$N|GaN|Si HEMTs
F. Jabliab, S. Dhouibicd, M. Gassoumibe a Laboratory of Micro-Optoelectroniques et Nanostructures, University of Monastir, 5019, Monastir, Tunisia
b Department of Physics, College of Sciences, Qassim University,
51452, Buryadh, Saudi Arabia
c Laboratory of physics of condensed Matter and Nanosciences, University of Monastir,
5019 Monastir, Tunisia
d Department of Physics, College of Science and Arts Al-Mithnab, Qassim University,
Al-Mithnab 51931, Saudi Arabia
e Research unit of advanced materials and nanotechnology, University of Kairouan, PO Box 471, 1200 Kasserine, Tunisia
Аннотация:
Improving material quality is essential for obtaining a high-power device. Surface trapping effects have been present in all HEMT devices, and have significantly impacted the problem of drain-current collapse. In this paper, performance of intentionally non-doped AlGaN|GaN|Si (HEMTs) before and after passivation with SiO$_2$|SiN is investigated. Capacitance-voltage at various temperatures ($C$–$V$–$T$), a drain current–voltage at various gate voltages $(I_{\mathrm{ds}}-V_{\mathrm{ds}}-V_{\mathrm{gs}})$, the gate leakage current with various temperatures $(I_{\mathrm{gs}}-V_{\mathrm{gs}}-T)$, and the maximum extrinsic transconductance $G_{\operatorname{max}}$ are measured; all of these measurements show the impact of SiO$_2$|SiN passivation on the performances of AlGaN|GaN|Si HEMTs.
Ключевые слова:
AlGaN|GaN|Si HEMTs, passivation by SiO$_2$, SiN, C–V–T, I$_{ds}$–V$_{ds}$–V$_{gs}$, I$_{gs}$–V$_{gs}$–T, $G_{\operatorname{max}}$.
Поступила в редакцию: 09.08.2020 Исправленный вариант: 09.08.2020 Принята в печать: 08.10.2020
Образец цитирования:
F. Jabli, S. Dhouibi, M. Gassoumi, “Improvement in electrical and 2DEG properties of Al$_{0.26}$Ga$_{0.74}$N|GaN|Si HEMTs”, Физика и техника полупроводников, 55:3 (2021), 285; Semiconductors, 55:3 (2021), 379–383
Образцы ссылок на эту страницу:
https://www.mathnet.ru/rus/phts6599 https://www.mathnet.ru/rus/phts/v55/i3/p285
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