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Физика и техника полупроводников, 2016, том 50, выпуск 6, страницы 811–815
(Mi phts6444)
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Эта публикация цитируется в 2 научных статьях (всего в 2 статьях)
Микро- и нанокристаллические, пористые, композитные полупроводники
Inter atomic force constants of binary and ternary tetrahedral semiconductors
Suresh Pala, R. K. Tiwaria, D. C. Guptaa, Vibhav K. Saraswatb, A. S. Vermab a Department of Physics, Jiwaji University, Gwalior, India
b Department of Physics, Banasthali Vidyapith, Rajasthan, India
Аннотация:
In this paper, we present the expressions relating the inter atomic force constants like as bond-stretching force constant ($\alpha$ in $N/m$) and bond-bending force constant ($\beta$ in $N/m$) for the binary (zinc blende structure) and ternary (chalcopyrite structure) semiconductors with the product of ionic charges (PIC) and crystal ionicity ($f_{i}$). Interatomic force constants of these compounds exhibit a linear relationship; when plot a graph between Interatomic force constants and the nearest neighbor distance $d$ ($\mathring{\mathrm{A}}$) with crystal ionicity ($f_{i}$), but fall on different straight lines according to the product of ionic charges of these compounds. A fairly good agreement has been found between the observed and calculated values of the $\alpha$ and $\beta$ for binary and ternary tetrahedral semiconductors.
Поступила в редакцию: 16.06.2015 Принята в печать: 12.11.2015
Образец цитирования:
Suresh Pal, R. K. Tiwari, D. C. Gupta, Vibhav K. Saraswat, A. S. Verma, “Inter atomic force constants of binary and ternary tetrahedral semiconductors”, Физика и техника полупроводников, 50:6 (2016), 811–815; Semiconductors, 50:6 (2016), 795–800
Образцы ссылок на эту страницу:
https://www.mathnet.ru/rus/phts6444 https://www.mathnet.ru/rus/phts/v50/i6/p811
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Страница аннотации: | 38 | PDF полного текста: | 23 |
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