|
Физика и техника полупроводников, 2018, том 52, выпуск 4, страница 483
(Mi phts5879)
|
|
|
|
Эта публикация цитируется в 7 научных статьях (всего в 7 статьях)
XXV International Symposium ''Nanostructures: Physics and Technology'', Saint Petersburg, June 26-30, 2017
Quantum wells, Quantum wires, Quantum dots, band structure
Floquet engineering of gapped 2D materials
O. V. Kibisa, K. Dinib, I. V. Iorshc, I. A. Shelykhbc a Department of Applied and Theoretical Physics, Novosibirsk State Technical University, 630073 Novosibirsk, Russia
b Science Institute, University of Iceland, Dunhagi 3, IS-107, Reykjavik, Iceland
c ITMO University, 197101 St. Petersburg, Russia
Аннотация:
It is demonstrated theoretically that the interaction of gapped 2D materials (gapped graphene and transition metal dichalchogenide monolayers) with a strong high-frequency electromagnetic field (dressing field) crucially changes the band structure of the materials. As a consequence, the renormalized band structure of the materials drastically depends on the field polarization. Particularly, a linearly polarized dressing field always decreases band gaps, whereas a circularly polarized field breaks the equivalence of band valleys in different points of the Brillouin zone and can both increase and decrease corresponding band gaps. It is shown also that a dressing field can turn both the band gaps and the spin splitting of the bands into zero. As a result, the dressing field can serve as an effective tool to control spin and valley properties of the materials in various optoelectronic applications.
Образец цитирования:
O. V. Kibis, K. Dini, I. V. Iorsh, I. A. Shelykh, “Floquet engineering of gapped 2D materials”, Физика и техника полупроводников, 52:4 (2018), 483; Semiconductors, 52:4 (2018), 523–525
Образцы ссылок на эту страницу:
https://www.mathnet.ru/rus/phts5879 https://www.mathnet.ru/rus/phts/v52/i4/p483
|
Статистика просмотров: |
Страница аннотации: | 31 | PDF полного текста: | 5 |
|