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Физика и техника полупроводников, 2018, том 52, выпуск 4, страница 480
(Mi phts5876)
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XXV International Symposium ''Nanostructures: Physics and Technology'', Saint Petersburg, June 26-30, 2017
Quantum wells, Quantum wires, Quantum dots, band structure
Red single-photon emission from InAs/AlGaAs quantum dots
M. V. Rakhlina, K. G. Belyaeva, G. V. Klimkoa, I. S. Mukhinbc, S. V. Ivanova, A. A. Toropova a Ioffe Institute, 194021 St. Petersburg, Russia
b St. Petersburg Academic University, Russian Academy of Sciences,
194021 St. Petersburg, Russia
c ITMO University, 197101 St. Petersburg, Russia
Аннотация:
We report on single-photon emission of InAs/AlGaAs self-assembled quantum dots (QDs) grown by molecular beam epitaxy. By varying the growth conditions the QDs luminescence could be tuned over a wide wavelength range from 0.64 to 1 $\mu$m, including red part of the visible spectrum. Emission properties of individual QDs are investigated by micro-photoluminescence ($\mu$-PL) spectroscopy using 500-nm-size etched mesa structures. Autocorrelation functions of photons from single QDs, measured in the wide spectral range demonstrate antibunching effect at zero delay time with a value of $g^{(2)}(0)\sim$ 0.17 that is a clear evidence of non-classical light.
Образец цитирования:
M. V. Rakhlin, K. G. Belyaev, G. V. Klimko, I. S. Mukhin, S. V. Ivanov, A. A. Toropov, “Red single-photon emission from InAs/AlGaAs quantum dots”, Физика и техника полупроводников, 52:4 (2018), 480; Semiconductors, 52:4 (2018), 511–513
Образцы ссылок на эту страницу:
https://www.mathnet.ru/rus/phts5876 https://www.mathnet.ru/rus/phts/v52/i4/p480
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