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Физика и техника полупроводников, 2018, том 52, выпуск 4, страница 466
(Mi phts5862)
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XXV International Symposium ''Nanostructures: Physics and Technology'', Saint Petersburg, June 26-30, 2017
Optoelectronics, optical properties
Optical properties of AlGaAs/GaAs resonant Bragg structure at the second quantum state
V. V. Chaldyshevabc, E. V. Kundelevac, A. N. Poddubnya, A. P. Vasil'eva, M. A. Yagovkinaa, Y. Chend, N. Maharjand, Z. Liud, M. L. Nakarmid, N. M. Shakyae a Ioffe Institute, 194021 St. Petersburg, Russia
b Peter the Great St. Petersburg Polytechnic University (SPbPU),
195251 St. Petersburg, Russia
c ITMO University, 197101 St. Petersburg, Russia
d Brooklyn College and the Graduate Center of the City University of New York, Brooklyn, NY 11210, USA
e New York University-Tandon School of Engineering, Brooklyn, NY 11201, USA
Аннотация:
Photoluminescence, optical reflectance and electro-reflectance spectroscopies were employed to study an AlGaAs/GaAs multiple-quantum-well based resonant Bragg structure, which was designed to match optical Bragg resonance with the exciton-polariton resonance at the second quantum state in the GaAs quantum wells. The structure with 60 periods of AlGaAs/GaAs quantum wells was grown on a semi-insulating substrate by molecular beam epitaxy. Broad and enhanced optical and electro-reflectance features were observed when the Bragg resonance was tuned to the second quantum state of the GaAs quantum well excitons manifesting an enhancement of the light-matter interaction under double-resonance conditions. By applying an alternating electric field, we revealed electro-reflectance features related to the x(e2-hh2) and x(e2-hh1) excitons. The excitonic transition x(e2-hh1), which is prohibited at zero electric field, was allowed by a DC bias due to brake of symmetry and increased overlap of the electron and hole wave functions caused by electric field.
Образец цитирования:
V. V. Chaldyshev, E. V. Kundelev, A. N. Poddubny, A. P. Vasil'ev, M. A. Yagovkina, Y. Chen, N. Maharjan, Z. Liu, M. L. Nakarmi, N. M. Shakya, “Optical properties of AlGaAs/GaAs resonant Bragg structure at the second quantum state”, Физика и техника полупроводников, 52:4 (2018), 466; Semiconductors, 52:4 (2018), 447–451
Образцы ссылок на эту страницу:
https://www.mathnet.ru/rus/phts5862 https://www.mathnet.ru/rus/phts/v52/i4/p466
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