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Физика и техника полупроводников, 2018, том 52, выпуск 5, страница 519
(Mi phts5845)
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Эта публикация цитируется в 1 научной статье (всего в 1 статье)
XXV International Symposium ''Nanostructures: Physics and Technology'', Saint Petersburg, June 26-30, 2017
Nanostructure Technology
Alternative technology for creating nanostructures using Dip Pen Nanolithography
A. V. Lukyanenkoab, T. E. Smolyarovaab a Kirensky Institute of Physics, Siberian Branch of the Russian Academy of Sciences, 660036 Krasnoyarsk, Russia
b Siberian Federal University, 660041 Krasnoyarsk, Russia
Аннотация:
For modern microelectronics, at the present time, the technologies of consciousness smart structures play an important role, which can provide accuracy, stability and high quality of the structures. Submicron lithography methods are quite expensive and have natural size limitations, not allowing the production of structures with an extremely small lateral limitation. Therefore, an intensive search was conducted for alternative methods for creating submicron resolution structures. Especially attractive one is the possibility of self-organization effects utilization, where the nanostructure of a certain size is formed under the influence of internal forces. The dip pen nanolithography method based on a scanning probe microscope uses a directwrite technology and allows one to carry out a playback of small size structures with high accuracy. In the experiment, a substrate coated with Au (15 nm) using a DPN technique is applied to the polymer to form a desired pattern nano-sized channel. The experiment was conducted using a pointed probe SiN, coated MHA-Acetonitrile, on the Si(111)/Fe$_3$Si/Au structure.
Образец цитирования:
A. V. Lukyanenko, T. E. Smolyarova, “Alternative technology for creating nanostructures using Dip Pen Nanolithography”, Физика и техника полупроводников, 52:5 (2018), 519; Semiconductors, 52:5 (2018), 636–638
Образцы ссылок на эту страницу:
https://www.mathnet.ru/rus/phts5845 https://www.mathnet.ru/rus/phts/v52/i5/p519
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