|
Физика и техника полупроводников, 2018, том 52, выпуск 5, страница 518
(Mi phts5844)
|
|
|
|
Эта публикация цитируется в 2 научных статьях (всего в 2 статьях)
XXV International Symposium ''Nanostructures: Physics and Technology'', Saint Petersburg, June 26-30, 2017
Nanostructure Technology
Fabrication of silicon nanostructures for application in photonics
A. N. Kamalievaa, N. A. Toropova, T. A. Vartanyana, M. A. Baranova, P. S. Parfenova, K. V. Bogdanova, Yu. A. Zharovaab, V. A. Tolmachevb a ITMO University, 197101 St. Petersburg, Russia
b Ioffe Institute, 194021 St. Petersburg, Russia
Аннотация:
Silicon is the primary material of modern electronics. It also possesses bright potentials for applications in nanophotonics. At the same time optical properties of bulk silicon do not fully satisfy requirements imposed on them. Fortunately, properties of silicon nanostructures strongly depend on their shapes and sizes. In this regard, of special interest is the development of fabrication and post-processing methods of silicon nanostructures. In this contribution we propose a method for silicon nanostructures fabrication combining the technique of high-vacuum deposition with metal-assisted chemical etching. SEM images as well as ellipsometry, Raman scattering and optical spectroscopy data prove that the desired structural changes were obtained.
Образец цитирования:
A. N. Kamalieva, N. A. Toropov, T. A. Vartanyan, M. A. Baranov, P. S. Parfenov, K. V. Bogdanov, Yu. A. Zharova, V. A. Tolmachev, “Fabrication of silicon nanostructures for application in photonics”, Физика и техника полупроводников, 52:5 (2018), 518; Semiconductors, 52:5 (2018), 632–635
Образцы ссылок на эту страницу:
https://www.mathnet.ru/rus/phts5844 https://www.mathnet.ru/rus/phts/v52/i5/p518
|
Статистика просмотров: |
Страница аннотации: | 33 | PDF полного текста: | 6 |
|