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Физика и техника полупроводников, 2018, том 52, выпуск 5, страница 517
(Mi phts5843)
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Эта публикация цитируется в 2 научных статьях (всего в 2 статьях)
XXV International Symposium ''Nanostructures: Physics and Technology'', Saint Petersburg, June 26-30, 2017
Nanostructure Technology
New method of porous Ge layer fabrication: structure and optical properties
E. B. Gorokhova, K. N. Astankovaa, I. A. Azarovab, V. A. Volodinab, A. V. Latyshevab a Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, 630090 Novosibirsk, Russia
b Novosibirsk State University, 630090 Novosibirsk, Russia
Аннотация:
Porous germanium films were produced by selective removal of the GeO$_2$ matrix from the GeO$_2\langle$Ge–NCs$\rangle$ heterolayer in deionized water or HF. On the basis of Raman and infrared spectroscopy data it was supposed that a stable skeletal framework from agglomerated Ge nanoparticles (amorphous or crystalline) was formed after the selective etching of GeO$_2\langle$Ge–NCs$\rangle$ heterolayers. The kinetics of air oxidation of amorphous porous Ge layers was investigated by scanning ellipsometry. Spectral ellipsometry allowed estimating the porosity of amorphous and crystalline porous Ge layers, which was $\sim$70 and $\sim$80%, respectively.
Образец цитирования:
E. B. Gorokhov, K. N. Astankova, I. A. Azarov, V. A. Volodin, A. V. Latyshev, “New method of porous Ge layer fabrication: structure and optical properties”, Физика и техника полупроводников, 52:5 (2018), 517; Semiconductors, 52:5 (2018), 628–631
Образцы ссылок на эту страницу:
https://www.mathnet.ru/rus/phts5843 https://www.mathnet.ru/rus/phts/v52/i5/p517
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Страница аннотации: | 54 | PDF полного текста: | 5 |
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