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Физика и техника полупроводников, 2018, том 52, выпуск 5, страница 516
(Mi phts5842)
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XXV International Symposium ''Nanostructures: Physics and Technology'', Saint Petersburg, June 26-30, 2017
Nanostructure Technology
Ion synthesis: Si–Ge quantum dots
N. N. Gerasimenkoa, N. S. Balakleyskiya, A. D. Volokhovskiya, D. I. Smirnovb, O. A. Zaporozhana a National Research University of Electronic Technology, 124498 Moscow, Russia
b Lebedev Physical Institute of the Russian Academy of Sciences,
119333 Moscow, Russia
Аннотация:
We present a method of Si–Ge QDs formation by ion beam implantation (IBI) technique and high temperature annealing for self-organization. Implantation doses varied from 10$^{14}$ to 10$^{17}$ cm$^{-2}$, ion energies ranged from 50 to 150 keV, annealing proceeded at temperature of 950 to 1050$^\circ$C in argon environment. Formed QDs show strong infrared (IR) photoluminescence (PL) in the temperature region 15–250 K.
Образец цитирования:
N. N. Gerasimenko, N. S. Balakleyskiy, A. D. Volokhovskiy, D. I. Smirnov, O. A. Zaporozhan, “Ion synthesis: Si–Ge quantum dots”, Физика и техника полупроводников, 52:5 (2018), 516; Semiconductors, 52:5 (2018), 625–627
Образцы ссылок на эту страницу:
https://www.mathnet.ru/rus/phts5842 https://www.mathnet.ru/rus/phts/v52/i5/p516
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