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Физика и техника полупроводников, 2018, том 52, выпуск 5, страница 505
(Mi phts5831)
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Эта публикация цитируется в 1 научной статье (всего в 1 статье)
XXV International Symposium ''Nanostructures: Physics and Technology'', Saint Petersburg, June 26-30, 2017
Nanostructure Characterization
Ballistic hole emission spectroscopy of self-assembled GeSi/Si(001) nanoislands
D. O. Filatov, D. V. Guseinov, V. Yu. Chalkov, S. A. Denisov, V. G. Shengurov Lobachevsky State University of Nizhny Novgorod
Аннотация:
Ballistic hole emission microscopy/spectroscopy has been applied to study the electronic structure of the hole states in the self-assembled GeSi/Si(001) nanoislands. The ballistic hole emission microscopic images demonstrated the spots of increased collector current related to the ballistic electron tunnelling via the confined valence band states in the GeSi/Si(001) nanoislands. In the ballistic hole emission spectra of the Ge hut clusters the stepwise features attributed to the quantum confined hole states have been observed. The results of present study demonstrate the capabilities of the ballistic hole emission microscopy/spectroscopy in the characterization of the electronic structures of the valence band states in the GeSi/Si nanostructures.
Образец цитирования:
D. O. Filatov, D. V. Guseinov, V. Yu. Chalkov, S. A. Denisov, V. G. Shengurov, “Ballistic hole emission spectroscopy of self-assembled GeSi/Si(001) nanoislands”, Физика и техника полупроводников, 52:5 (2018), 505; Semiconductors, 52:5 (2018), 590–592
Образцы ссылок на эту страницу:
https://www.mathnet.ru/rus/phts5831 https://www.mathnet.ru/rus/phts/v52/i5/p505
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Страница аннотации: | 36 | PDF полного текста: | 5 |
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