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Физика и техника полупроводников, 2018, том 52, выпуск 5, страница 496
(Mi phts5822)
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XXV International Symposium ''Nanostructures: Physics and Technology'', Saint Petersburg, June 26-30, 2017
Excitons in Nanostructures
Biexciton binding energy in spherical quantum dots with $\Gamma_{8}$ valence band
A. A. Golovatenko, M.A. Semina, A. V. Rodina, T. V. Shubina Ioffe Institute, 194021 St. Petersburg, Russia
Аннотация:
The biexciton binding energy in spherical CdSe/ZnSe quantum dots is calculated variationally in the framework of $k$ $p$-perturbation theory. Smooth and abrupt confining potentials with the same localization area of carriers are compared for two limiting cases of light hole to heavy hole mass ratio $\beta$ = mlh/mhh: $\beta$ = 1 and $\beta$ = 0. Accounting for correlations between carriers results in their polarized configuration and significantly increases the biexciton binding energy in comparison with the first order perturbation theory. For $\beta$ = 0 in smooth confining potentials there are three nearby biexciton states separated by small energy gap between 1$S3/2$ and 1$P3/2$ hole states.
Образец цитирования:
A. A. Golovatenko, M.A. Semina, A. V. Rodina, T. V. Shubina, “Biexciton binding energy in spherical quantum dots with $\Gamma_{8}$ valence band”, Физика и техника полупроводников, 52:5 (2018), 496; Semiconductors, 52:5 (2018), 554–557
Образцы ссылок на эту страницу:
https://www.mathnet.ru/rus/phts5822 https://www.mathnet.ru/rus/phts/v52/i5/p496
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