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Изготовление, обработка, тестирование материалов и структур
Effect of oxygen flow rate on structural, electrical and optical properties of zinc aluminum oxide thin films deposited by DC magnetron sputtering
B. Rajesh Kumara, B. Hymavathib a Department of Physics, Gandhi Institute of Technology and Management (GITAM), Andhra Pradesh, India
b Department of Physics, Anil Neerukonda Institute of Technology and Sciences (Autonomous), Sangivalasa, Visakhapatnam, Andhra Pradesh, India
Аннотация:
Zinc Aluminum Oxide thin films were deposited on glass substrates by reactive DC magnetron sputtering method by varying oxygen flow rates from 1 to 4 sccm. Glancing angle $X$-ray diffraction patterns ofzinc aluminum oxide thin films exhibits (0 0 2) peak with $c$-plane preferentially oriented parallel to the substrate. The surface morphology and elemental analysis of the films was observed by field emission scanning electron microscopy attached with energy dispersive $X$-ray analysis spectroscopy. An average optical transmittance of 83–90% is obtained for the films deposited at various oxygen flow rates. The optical band gap of the films increases from 3.41 to 3.53 eV with the increase of oxygen flow rate due to Burstein–Moss effect. The optical dispersion parameters such as dispersion energy ($E_{d}$), oscillator energy ($E_{0}$) and static refractive index ($n_{0}$) were determined using the Wemple-DiDomenico (W-D) single oscillator model. The nonlinear optical parameters such as optical susceptibility ($\chi^{(1)}$), third order nonlinear optical susceptibility ($\chi^{(3)}$) and nonlinear refractive index ($n_{2}$) were also determined.
Поступила в редакцию: 04.04.2018 Исправленный вариант: 08.11.2018 Принята в печать: 08.11.2018
Образец цитирования:
B. Rajesh Kumar, B. Hymavathi, “Effect of oxygen flow rate on structural, electrical and optical properties of zinc aluminum oxide thin films deposited by DC magnetron sputtering”, Физика и техника полупроводников, 53:4 (2019), 583; Semiconductors, 53:4 (2019), 573–581
Образцы ссылок на эту страницу:
https://www.mathnet.ru/rus/phts5554 https://www.mathnet.ru/rus/phts/v53/i4/p583
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