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Физика и техника полупроводников, 2019, том 53, выпуск 12, страница 1631
(Mi phts5324)
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Эта публикация цитируется в 2 научных статьях (всего в 2 статьях)
Поверхность, границы раздела, тонкие пленки
The effect of various annealing cooling rates on electrical and morphological properties of TiO$_{2}$ thin films
S. Asalzadeh, K. Yasserian Department of Physics, Islamic Azad University,
Karaj Branch, Iran
Аннотация:
This paper investigates the effect of various postannealing cooling rates on structural and electrical properties of Titanium Dioxide (TiO$_{2}$) thin films. TiO$_{2}$ thin films were deposited on a silicon substrate using DC magnetron sputtering technique. After annealing TiO$_{2}$ thin films at 600$^\circ$C, to investigate the effect of different cooling rates on TiO$_{2}$ thin films, samples were cooled down from 600$^\circ$C to room temperature under 3 different rates: 2$^\circ$C/min, 6$^\circ$C/min, and 8$^\circ$C/min. The Surface morphology, crystal structure, and electrical properties of the samples were characterized by atomic force microscope (AFM), X-ray diffraction (XRD) and Four-point probe (FPP) techniques. It is found that the rate of decreasing temperature after annealing can affect the morphology structure and electrical resistivity of TiO$_{2}$. The sample with 2$^\circ$C/min cooling rate has the largest grain size and highest electrical resistivity, while the sample with 8$^\circ$C/min cooling rate has the smallest grain size and lowest electrical resistivity.
Ключевые слова:
TiO$_{2}$, Annealing, Electrical properties, Thin Film, Cooling Rate.
Поступила в редакцию: 09.05.2019 Исправленный вариант: 30.07.2019 Принята в печать: 05.08.2019
Образец цитирования:
S. Asalzadeh, K. Yasserian, “The effect of various annealing cooling rates on electrical and morphological properties of TiO$_{2}$ thin films”, Физика и техника полупроводников, 53:12 (2019), 1631; Semiconductors, 53:12 (2019), 1603–1607
Образцы ссылок на эту страницу:
https://www.mathnet.ru/rus/phts5324 https://www.mathnet.ru/rus/phts/v53/i12/p1631
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Страница аннотации: | 30 | PDF полного текста: | 7 |
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