|
Физика и техника полупроводников, 2020, том 54, выпуск 1, страница 47
(Mi phts5301)
|
|
|
|
Эта публикация цитируется в 17 научных статьях (всего в 17 статьях)
Электронные свойства полупроводников
First principles study on electronic structure and optical properties of ternary semiconductor In$_{x}$Al$_{1-x}$P alloys
Farid Okbia, Said Lakelab, Said Benramachea, K. Almib a Laboratory of Physical Materials, University of Laghouat, Laghouat, Algeria
b Laboratory of Metallic and Semiconducting Materials, University of Biskra, Biskra, Algeria
Аннотация:
The elastic, electronic and optical properties of the indium doped AlP, have been investigated by the first-principle calculations within the framework of the density functional theory (DFT). Our calculated lattice constants and bulk moduli for AlP and InP are in good agreement with the available theoretical and experimental data. The lattice constants increase while the bulk modulus decreases with In concentration increasing. The elastic constants C$_{ij}$ of In$_{x}$Al$_{1-x}$P alloys have been calculated for the first time. Result shows that with the increase of indium concentration, the band gap of In$_{x}$Al$_{1-x}$P decreases and varies from indirect band gap to direct band gap; the absorption band edge and the absorption peak move to low energy side; the static reflectivity increases. With the increasing of the incident photon energy, In$_{x}$Al$_{1-x}$P shows metal reflective properties in certain energy range. With the increasing of Indium concentration, static dielectric constant increases and the intersection of dielectric function and the $x$-axis move towards low energy side; the peak of energy loss function move to high energy side and the peak value reduces.
Ключевые слова:
in doped AlP, DFT, elastic properties, optical constants.
Поступила в редакцию: 25.08.2019 Исправленный вариант: 25.08.2019 Принята в печать: 05.09.2019
Образец цитирования:
Farid Okbi, Said Lakel, Said Benramache, K. Almi, “First principles study on electronic structure and optical properties of ternary semiconductor In$_{x}$Al$_{1-x}$P alloys”, Физика и техника полупроводников, 54:1 (2020), 47; Semiconductors, 54:1 (2020), 58–66
Образцы ссылок на эту страницу:
https://www.mathnet.ru/rus/phts5301 https://www.mathnet.ru/rus/phts/v54/i1/p47
|
|