Fabrication and analysis of the current transport mechanism of Ni/$n$-GaN Schottky barrier diodes through different models

The current transport mechanism of indigenously fabricated Ni/$n$-GaN Schottky barrier diodes (SBDs) has been analysed using the current–voltage (I–V) and capacitance-voltage (C–V) measurements. Various models like Rhoderick's method, Cheung's method, Norde's method, modified Norde's method, Hernandez's method, and Chattopadhyay's method have been used to extract the different electric parameters from the I–V curve. A comparison has been made between the various electrical parameters such as ideality factor, barrier height, and series resistance, which are extracted from the forward bias I–V curve of Ni/$n$-GaN SBDs. The carrier concentration of the substrate and the barrier height is obtained from C–V characteristics of Ni/$n$-GaN SBDs. We observe from the reverse current characteristics that the Ni/$n$-GaN SBDs show the dominance of Schottky emission in intermediate and higher voltages.