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Физика и техника полупроводников, 2020, том 54, выпуск 10, страница 1098
(Mi phts5143)
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Эта публикация цитируется в 1 научной статье (всего в 1 статье)
Физика полупроводниковых приборов
Investigation of the electrical properties of double-gate dual-active-layer (DG-DAL) thin-film transistor (TFT) with HfO$_{2}$/La$_{2}$O$_{3}$/HfO$_{2}$ (HLH) sandwich gate dielectrics
L. Ramesha, S. Moparthia, P. K. Tiwarib, V. R. Samojuc, G. K. Saramekalaa a Department of Electronics and Communication Engineering, NIT Calicut,
Kozhikode, 673601 India
b Department of Electrical Engineering, IIT Patna,
Patna, 801103 India
c Department of Electronics and Communication Engineering, Gayatri Vidya Parishad College of Engineering, Vishakapatnam, 530048 India
Аннотация:
In this paper, the electrical properties of a double-gate dual-active-layer (DG-DAL) thin-film transistor (TFT) is investigated. To increase the ON-current and pixel intensity, and control the voltage stress bias, the conventional gate oxide material (silicon dioxide SiO$_{2}$) is replaced with a tri-high-k gate dielectric layer, hafnium dioxide HfO$_{2}$/lanthanum oxide La$_{2}$O$_{3}$/hafnium dioxide HfO$_{2}$ (HLH). Further, the performance of the proposed DG-DAL structure is compared with the single-active-layer (SAL) and dual-active-layer (DAL) TFTs. The amorphous indium-gallium zinc-oxide ($\alpha$-IGZO) is considered as active layer for SAL channel region, and on the other hand, $\alpha$-IGZO and indium-tin-oxide (ITO) are considered as active layers for DAL TFT and DG-DAL TFT channel regions. The parameters such as OFF-current, ON-current, $I_{\operatorname{ON}}/I_{\operatorname{OFF}}$ ratio, threshold voltage, mobility, average subthreshold swing, etc. are evaluated for the considered structures. It is observed that the DG-DAL TFT with HLH dielectric offers high ON-current of 3.85 $\cdot$ 10$^{-3}$ A/$\mu$m, very low OFF-current of 2.53 $\cdot$ 10$^{-17}$ A/$\mu$m, very high $I_{\operatorname{ON}}/I_{\operatorname{OFF}}$ ratio of 1.51 $\cdot$ 10$^{14}$, the threshold voltage of 0.642 V, high mobility of 35 cm$^{2}\cdot$ $v^{-1}$ $\cdot$ s$^{-1}$ and average subthreshold swing of 127.84 mV/dec. A commercial TCAD simulation tool ATLAS from Silvaco$^{\operatorname{TM}}$ is used to investigate all the parameters for considered structures.
Ключевые слова:
single active layer (SAL), dual active layer (DAL), double-gate dual active layer (DG-DAL), InGaZnO (IGZO), InSnO (ITO), thin-film transistor (TFT), HfO$_{2}$/La$_{2}$O$_{3}$/HfO$_{2}$ (HLH).
Поступила в редакцию: 11.03.2020 Исправленный вариант: 11.03.2020 Принята в печать: 09.06.2020
Образец цитирования:
L. Ramesh, S. Moparthi, P. K. Tiwari, V. R. Samoju, G. K. Saramekala, “Investigation of the electrical properties of double-gate dual-active-layer (DG-DAL) thin-film transistor (TFT) with HfO$_{2}$/La$_{2}$O$_{3}$/HfO$_{2}$ (HLH) sandwich gate dielectrics”, Физика и техника полупроводников, 54:10 (2020), 1098; Semiconductors, 54:10 (2020), 1290–1295
Образцы ссылок на эту страницу:
https://www.mathnet.ru/rus/phts5143 https://www.mathnet.ru/rus/phts/v54/i10/p1098
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