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Нанофотоника
The influence of the Schottky barrier at the metal/PbS NCs junction on the charge transport properties
D. A. Onishchuk, P. S. Parfenov, A. Dubavik, A. P. Litvin Center of Information Optical Technologies, ITMO University, St. Petersburg, Russia
Аннотация:
The effect of the Schottky barrier height changes on the metal/EDT-treated (1,2-ethanedithiol) PbS nanocrystals film interface is considered. Also, the influence of shunts on the J–V characteristic and the Schottky barrier height is demonstrated, as well, the effect of silver oxide layer on the charge accumulation and tunneling. It is shown that the gold electrodes provide more stable results even when the Schottky barrier is formed, while the silver electrode provides more current.
Ключевые слова:
semiconductor nanocrystals, Schottky barrier, charge carriers transport, thin films.
Поступила в редакцию: 18.01.2020 Исправленный вариант: 18.01.2020 Принята в печать: 20.04.2020
Образец цитирования:
D. A. Onishchuk, P. S. Parfenov, A. Dubavik, A. P. Litvin, “The influence of the Schottky barrier at the metal/PbS NCs junction on the charge transport properties”, Оптика и спектроскопия, 128:8 (2020), 1194; Optics and Spectroscopy, 128:8 (2020), 1241–1243
Образцы ссылок на эту страницу:
https://www.mathnet.ru/rus/os347 https://www.mathnet.ru/rus/os/v128/i8/p1194
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