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CHEMISTRY AND MATERIAL SCIENCE
Modification of nanoscale thermal oxide films formed on indium phosphide under the influence of tin dioxide
I. Ya. Mittova, V. F. Kostryukov, N. A. Ilyasova, B. V. Sladkopevtsev, A. A. Samsonov Voronezh State University, Universitetskaya pl., Voronezh, 394018, Russia
Аннотация:
The kinetic parameters and the limiting stage of the defining process were established by studying the thermal oxidation of SnO$_2$/InP heterostructures (thickness of SnO$_2$ layer $\sim$ 50 nm). It was established that SnO$_2$ does not have a chemical stimulating effect on the film growth rate; however, it is effective as a modifier of their structure and properties. SnO$_2$ provides the formation of nanoscale films with semiconductor properties.
Ключевые слова:
indium phosphide, nanoscale films, thermal oxidation, tin dioxide.
Поступила в редакцию: 08.11.2019 Исправленный вариант: 16.01.2020
Образец цитирования:
I. Ya. Mittova, V. F. Kostryukov, N. A. Ilyasova, B. V. Sladkopevtsev, A. A. Samsonov, “Modification of nanoscale thermal oxide films formed on indium phosphide under the influence of tin dioxide”, Наносистемы: физика, химия, математика, 11:1 (2020), 110–116
Образцы ссылок на эту страницу:
https://www.mathnet.ru/rus/nano504 https://www.mathnet.ru/rus/nano/v11/i1/p110
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Страница аннотации: | 126 | PDF полного текста: | 50 |
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