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Эта публикация цитируется в 3 научных статьях (всего в 3 статьях)
CHEMISTRY AND MATERIAL SCIENCE
Annealing atmosphere influence on contact resistivity of ohmic Pd/Ge/Au contact to n-GaAs
D. M. Mitina, F. Yu. Soldatenkova, A. M. Mozharovb, A. A. Vasil’evb, V. V. Neplokhb, I. S. Mukhinbc a Ioffe Physical Technical Institute of the Russian Academy of Sciences,
Politekhnicheskaya, 26, St. Petersburg, 194021, Russia
b Saint Petersburg National Research Academic University of the Russian Academy of Sciences,
Khlopina, 8, building 3, lit. A, St. Petersburg, 194021, Russia
c Saint Petersburg National Research University of Information Technologies, Mechanics and Optics,
Kronverkskiy, 49, St. Petersburg, 197101, Russia
Аннотация:
We report the results of research for the Pd/Ge/Au ohmic contact resistivity to n-GaAs thermally treated in various gas atmospheres at
low temperature. The lowest contact resistivity of about $4\cdot 10^{-6}$ $\Omega\cdot$cm$^2$ was obtained with annealing under a hydrogen atmosphere. The
mechanism of the ohmic contact formation upon annealing under a hydrogen atmosphere has been proposed. The achieved results can be used
for development of multi-junction solar cells, power semiconductor devices, lasers, and nanowire-based structures sensible to a high temperature
treatment.
Ключевые слова:
GaAs, ohmic contact, contact resistivity, thermal annealing, solid-phase regrowth.
Поступила в редакцию: 08.11.2018
Образец цитирования:
D. M. Mitin, F. Yu. Soldatenkov, A. M. Mozharov, A. A. Vasil'ev, V. V. Neplokh, I. S. Mukhin, “Annealing atmosphere influence on contact resistivity of ohmic Pd/Ge/Au contact to n-GaAs”, Наносистемы: физика, химия, математика, 9:6 (2018), 789–792
Образцы ссылок на эту страницу:
https://www.mathnet.ru/rus/nano371 https://www.mathnet.ru/rus/nano/v9/i6/p789
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Страница аннотации: | 103 | PDF полного текста: | 51 |
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